UMH14N HTSEMI | Alldatasheet
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Technical content
dual digital transistors (NPN+ NPN)
FEATURES
Two DTC144T chips in a package. Marking: H14 Equivalent circuit Absolute maximum ratings (Ta=25℃) ELECTRICAL CHARACTERISTICS (Ta=25℃) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =50μA, I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50μA, I C =0 5 V Collector cut-off current I CBO V CB =50V, I E =0 500 nA Emitter cut-off current I EBO V EB =4V, I C =0 500 nA DC current transfer ration h FE V CE =5V, I C =1mA 100 600 Collector-emitter saturation voltage V CE(sat) I C =5mA, I B =0.5mA 0.3 V Transition frequency f T V CE =10V, I C =5mA, f =100MHz 250 MHz Input resistance R 32.9 61.1 K Ω Symbol Parameter Value Units V CBO Collector-base Voltage 50 V V CEO Collector-emitter Voltage 50 V V EBO Emitter-base Voltage 5 V I C Collector current 100 mA P D Power dissipation 150 mW T J Junction temperature 150 ℃ T stg Storage temperature -55~+150 ℃ www.htsemi.comsemiconductor JinYu Date:2011/ 05