UMH10N HTSEMI | Alldatasheet
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Technical content
General purpose transisto rs (dual transistors)
FEATURES
z Two DTC123J chips in a package z Mounting possible with SOT-36 3 automatic mounting machines. z Transistor elements are independ ent, eliminating interference. z Mounting cost and area be cut in half. Marking: H10 Equivalent circuit Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage V CC 50 V Input voltage V IN -5~12 V I O 100 Output current I C(MAX) 100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions V I(off) 0.5 V CC =5V, I O =100μA Input voltage V I(on) 1.1 V V O =0.3V, I O =5mA Output voltage V O(on) 0.1 0.3 V I O I =5mA/0.25mA Input current I I 3.6 mA V I =5V Output current I O(off) 0.5 μA V CC =50V, V I DC current gain G I 80 V O =5V, I O =10mA Input resistance R 1.54 2.2 2.86 K Ω - Resistance ratio R 17 21 26 - Transition frequency f T
250 MHz V
=10V, I E =5mA, f=100MHz www.htsemi.comsemiconductor JinYu Date:2011/ 05