UMG5N HTSEMI | Alldatasheet
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Technical content
dual digital transistors (PNP+ PNP)
FEATURES
z Two DTA114Y chips in a package Marking: G5 Equivalent circuit Absolute maximum ratings (T a =25℃) Electrical Characteristics (T a =25℃) Parameter Symbol Test conditions Min Typ Max Unit Input turn-on voltage V i(on) V O =0.3V, I O =1mA 1.4 V Input cut-off voltage V i(off) V CC =5V, I O =100µA 0.3 V Output voltage V O(on) I O =5mA, I i =0.25 mA 0.3 V Input cut-off current I i V i =5V 0.88 mA Output cut-off current I O(off) V CC =50V, V i =0 0.5 µA DC current gain G i V O =5V, I O =5mA 68 Transition frequency f T V O =10V, I O =5mA, f =100MHz 250 MHz Input resistance R 7 13 K Ω Resistance ratio R R 3.7 5.7 Symbol Parameter Value Units V CC Supply Voltage 50 V I C(MAX) Output Current 100 mA V i Input Voltage -6 to +40 V P D Power Dissipation 150 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.htsemi.comsemiconductor JinYu Date:2011/ 05