UMG3N HTSEMI | Alldatasheet
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Technical content
General purpose transistors (dual transistors)
FEATURES
z Two DTC143T chips in a package z Mounting possible with SOT-35 3 automatic mounting machines. z Transistor elements are independ ent, eliminating interference. z Mounting cost and area be cut in half. Marking: G3 Equivalent circuit Absolute maximum ratings (Ta=25℃) Symbol Parameter LIMITS Unit V CBO Collector-Base Voltage 50 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 100 mA P C Collector Dissipation 150 mW T j Junction temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =50μA,I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50μA,I C =0 5 V Collector cut-off current I CBO V CB =50V,I E =0 0.5 uA Emitter cut-off current I EBO V EB =4V,I C =0 0.5 uA DC current gain h FE V CE =5V,I C =1mA 100 600 Collector-emitter saturation voltage V CE(sat) I C =5mA,I B =0.25mA 0.3 V Transition frequency f T V CE =10V,I E =-5mA, f=100MHz 250 MHz Input resistor R 3.29 4.7 6.11 k Ω R R DTr DTr (3) (2) (1) (4) (5)/(6) www.htsemi.comsemiconductor JinYu Date:2011/ 05