UMF5N JIANGSU | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD UMF5N

FEATURES

z 2SA2018 and DTC144 E are housed independently in a package. z Mounting possible with SOT-36 3 automatic mounting machines. z Transistor elements are independ ent, eliminating interference. z Mounting cost and area be cut in half. Marking: F5 Tr1 Absolute maximum ratings (Ta=25℃) Symbol Parameter Va lue Units V CBO Collector-Base Voltage -15 V V CEO Collector-Emitter Voltage -12 V V EBO Emitter-Base Voltage -6 V I C Collector Current -500 mA P C Collector Power Dissipation 150 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10μA, I E =0 -15 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -12 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA, I C =0 -6 V Collector cut-off current I CBO V CB =-15V, I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-6V, I C =0 -0.1 μA DC current gain h FE V CE =-2V, I C =-10mA 270 680 Collector-emitter saturation voltage V CE(sat) I C =-200mA, I B =-10mA -0.25 V Transition frequency f T V CE =-2V, I E =-10mA, f=100MHz 260 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 6.5 pF JCET SOT-363 Plastic-Encapsulate Transistors SOT-363 DUAL TRANSISTOR (PNP+NPN) www.cj-elec.com 1www.cj-elec.com E,Mar,2016

Tr2 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage V CC 50 V Input voltage V IN -10~+40 V I O Output current I C(MAX) 100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions V I(off) 0.5 V CC =5V, I O =100μA Input voltage V I(on) 3.0 V V O =0.3V, I O =2mA Output voltage V O(on) 0.1 0.3 V I O I =10mA/0.5mA Input current I I 0.18 mA V I =5V Output current I O(off) 0.5 μA V CC =50V, V I DC current gain G I 68 V O =5V, I O =5mA Input resistance R 32.9 47 61.1 KΩ - Resistance ratio R 0.8 1 1.2 - Transition frequency f T

250 MHz V

=10V, I E =-5mA, f=100MHz www.cj-elec.com 2www.cj-elec.com E,Mar,2016

SOT-363 Suggested Pad Layout www.cj-elec.com 3www.cj-elec.com E,Mar,2016 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

www.cj-elec.com 4www.cj-elec.com E,Mar,2016