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Technical content
General purpose transistors (dual transistors)
FEATURES
z 2SA2018 and DTC144E are housed independently in a package. z Mounting possible with SOT-36 3 automatic mounting machines. z Transistor elements are independ ent, eliminating interference. z Mounting cost and area be cut in half. Marking: F5 Equivalent circuit Tr1 Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units V CBO Collector-Base Voltage -15 V V CEO Collector-Emitter Voltage -12 V V EBO Emitter-Base Voltage -6 V I C Collector Current -500 mA P C Collector Power Dissipation 150 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10μA, I E =0 -15 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -12 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA, I C =0 -6 V Collector cut-off current I CBO V CB =-15V, I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-6V, I C =0 -0.1 μA DC current gain h FE V CE =-2V, I C =-10mA 270 680 Collector-emitter saturation voltage V CE(sat) I C =-200mA, I B =-10mA -0.25 V Transition frequency f T V CE =-2V, I E =-10mA, f=100MHz 260 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 6.5 pF R R DTr2 Tr1 (1)(2)(3) (4) (5) (6) www.htsemi.comsemiconductor JinYu Date:2011/ 05
Tr2 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage V CC 50 V Input voltage V IN -10~+40 V I O Output current I C(MAX) 100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions V I(off) 0.5 V CC =5V, I O =100μA Input voltage V I(on) 3.0 V V O =0.3V, I O =2mA Output voltage V O(on) 0.1 0.3 V I O I =10mA/0.5mA Input current I I 0.18 mA V I =5V Output current I O(off) 0.5 μA V CC =50V, V I DC current gain G I 68 V O =5V, I O =5mA Input resistance R 32.9 47 61.1 K Ω - Resistance ratio R 0.8 1 1.2 - Transition frequency f T
250 MHz V
=10V, I E =-5mA, f=100MHz www.htsemi.comsemiconductor JinYu Date:2011/ 05 UMF5N