UMF21N HTSEMI | Alldatasheet

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Technical content

DESCRIPTION

Silicon epitaxial planar transistor

FEATURES

z 2SA2018 and DTC114E are housed independently in a package. z Power switching circuit in a single package. z Mounting cost and area can be cut in half. APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:F21 F21 TR1 MAXIMUM RATINGS T a =25℃ unless otherwise noted Parameter Symbol Limits Unit Supply voltage V CC 50 V Input voltage V IN -10~40 V I O Output current I C(MAX) 100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 Storage temperature Tstg -55~150 Symbol Parameter Value Units V CBO Collector- Base Voltage -15 V V CEO Collector-Emitter Voltage -12 V V EBO Emitter-Base Voltage -6 V I C Collector Current -Continuous -0.5 A P C Collector Dissipation 0.15 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ SOT-363 R R DTr2 Tr1 (1)(2)(3) (4) (5) (6) Equivalent Circuit Power management (dual transistors) www.htsemi.comsemiconductor JinYu Date:2011/ 05

TR1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10 μ A, I E =0 -15 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -12 V Emitter-base breakdown voltage V (BR)EBO I E =-10 μ A, I C =0 -6 V Collector cut-off current I CBO V CB = -15 V, I E =0 -0.1 μ A Emitter cut-off current I EBO V EB =- 6V, I C =0 -0.1 μ A DC current gain h FE V CE =-2V, I C =-10mA 270 680 Collector-emitter saturation voltage V CE(sat) I C =-200mA,I B =-10mA -0.25 V Transition frequency f T V CE =-2V,I C =-10mA, f= 100 MHz

260 MHz

Collector output capacitance C ob V CB V,I E =0,f= MHz 6.5 pF Parameter Symbol Min. Typ Max. Unit Conditions V I(off) 0.5 V CC =5V ,I O =100μA Input voltage V I(on) V V O =0.3V ,I O =10 mA Output voltage V O(on)

0.3 V I

O I =10mA/0.5mA Input current I I 0.88 mA V I =5V Output current I O(off) 0.5 μA V CC =50V, V I DC current gain G I 30 V O =5V ,I O =5mA Input resistance R 7 10 13 K Ω Resistance ratio R 0.8 1 1.2 Transition frequency f T

250 MHz V

=10V ,I E =-5mA,f=100MHz EMF23 www.htsemi.comsemiconductor JinYu Date:2011/ 05