UMD6N HTSEMI | Alldatasheet
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Technical content
DIGITAL TRANSISTOR (NPN+ PNP)
FEATURES
z DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. z Transistor elements are independent, eliminating interference. z Mounting cost and area can be cut in half. External circuit MARKING:D6 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Collector-base voltage V (BR)CBO 50 V Collector-emitter voltage V (BR)CEO 50 V Emitter-base voltage V (BR)EBO 5 V Collector current I C 100 mA Collector Power dissipation P C 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V (BR)CBO
50 V I
C =50μA Collector-emitter breakdown voltage V (BR)CEO C =1mA Emitter-base breakdown voltage V (BR)EBO
5 V I
E =50μA Collector cut-off current I CBO 0.5 μA V CB =50V Emitter cut-off current I EBO 0.5 μA V EB =4V Collector-emitter saturation voltage V CE(sat)
0.3 V I
C =5mA,I B =0.25mA DC current transfer ratio h FE 100 600 V CE =5V,I C =1mA Input resistance R 3.29 4.7 6.11 K Ω Transition frequency f T
250 MHz V
=10V ,I E =-5mA,f=100MHz SOT-363 A,Dec,2010 www.htsemi.comsemiconductor JinYu Date:2011/ 05