UMD3N HTSEMI | Alldatasheet
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Technical content
DUAL DIGITAL TRANSISTOR (NPN+ PNP)
FEATURES
z DTA114E and DTC114E transistors are built-in a package. z Transistor elements are independent, eliminating interference. z Mounting cost and area can be cut in half. External circuit MARKING:D3 Absolute maximum ratings (Ta=25℃) Parameter Symbol Limits Unit Supply voltage V CC 50 V Input voltage V IN -10~40 V I O Output current I C(MAX) 100 mA Power dissipation Pd 150(TOTAL) mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions V I(off) 0.5 V CC =5V ,I O =100µA Input voltage V I(on) V V O =0.3V ,I O =10mA Output voltage V O(on)
0.3 V I
O I =10mA/0.5mA Input current I I 0.88 mA V I =5V Output current I O(off) 0.5 μA V CC =50V, V I DC current gain G I 30 V O =5V,I O =5mA Input resistance R 7 10 13 K Ω Resistance ratio R 0.8 1 1.2 Transition frequency f T
250 MHz V
=10V ,I E =-5mA,f=100MHz SOT-363 www.htsemi.comsemiconductor JinYu Date:2011/ 05