UMD22N HTSEMI | Alldatasheet
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Technical content
General purpose transisto rs (dual transistors)
FEATURES
z Both the DTA143Z chip and DTC143Z chip in a package z Mounting possible with SOT-36 3 automatic mounting machines. z Transistor elements are independ ent, eliminating interference. z Mounting cost and area be cut in half. Marking: D22 Equivalent circuit DTr1 DTC143Z Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage V CC 50 V Input voltage V IN -5~+30 V I O 100 Output current I C(MAX) 100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions V I(off) 0.5 V CC =5V, I O =100μA Input voltage V I(on) 1.3 V V O =0.3V, I O =5mA Output voltage V O(on) 0.1 0.3 V I O I =5mA/0.25mA Input current I I 1.8 mA V I =5V Output current I O(off) 0.5 μA V CC =50V, V I DC current gain G I 80 V O =5V, I O =10mA Input resistance R 3.29 4.7 6.11 K Ω - Resistance ratio R 8 10 12 - Transition frequency f T
250 MHz V
=10V, I E =-5mA, f=100MHz www.htsemi.comsemiconductor JinYu Date:2011/ 05
Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage V CC -50 V Input voltage V IN -30~+5 V I O -100 Output current I C(MAX) -100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions V I(off) -0.5 V CC =-5V, I O =-100μA Input voltage V I(on) -1.3 V V O =-0.3V, I O =-5mA Output voltage V O(on) -0.1 -0.3 V I O I =-5mA/-0.25mA Input current I I -1.8 mA V I =-5V Output current I O(off) -0.5 μA V CC =-50V, V I DC current gain G I 80 V O =-5V, I O =-10mA Input resistance R 3.29 4.7 6.11 K Ω - Resistance ratio R 8 10 12 - Transition frequency f T =-10V, I E =5mA, f=100MHz UMD22N www.htsemi.comsemiconductor JinYu Date:2011/ 05