UMD12N JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD UMD12N
FEATURES
z Both the DTC144E chip and DTA144E chip in a package z Mounting possible with SOT-36 3 automatic mounting machines z Transistor elements are independ ent, eliminating interference z Mounting cost and area be cut in half Marking: D12 T Absolute maximum ratings (Ta=25℃) Parameter Symbol Value Unit Supply voltage V CC 50 V Input voltage V IN -10~40 V I O Output current I C(MAX) 100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ T Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions V I(off) 0.5 V CC =5V, I O =100μA Input voltage V I(on) V V O =0.3V, I O =2mA Output voltage V O(on) 0.1 0.3 V I O I =10mA/0.5mA Input current I I 0.18 mA V I =5V Output current I O(off) 0.5 μA V CC =50V, V I DC current gain G I 68 V O =5V, I O =5mA Input resistance R 32.9 47 61.1 K Ω - Resistance ratio R 0.8 1 1.2 - Transition frequency f T
250 MHz V
=10V, I E =-5mA, f=100MHz JC(T SOT-363 Dual Digital Transistors (NPN+PNP) www.cj-elec.com 1www.cj-elec.com E,Mar,2016 Digital Transistors (Built-in Resistors)
T Absolute maximum ratings (Ta=25℃) Parameter Symbol Value Unit Supply voltage V CC -50 V Input voltage V IN -40~10 V I O -30 Output current I C(MAX) -100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ T Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions V I(off) -0.5 V CC =-5V, I O =-100μA Input voltage V I(on) V V O =-0.3V, I O =-2mA Output voltage V O(on) -0.1 -0.3 V I O I =-10mA/-0.5mA Input current I I -0.18 mA V I =-5V Output current I O(off) -0.5 μA V CC =-50V, V I DC current gain G I 68 V O =-5V, I O =-5mA Input resistance R 32.9 47 61.1 K Ω - Resistance ratio R 0.8 1 1.2 - Transition frequency f T =-10V, I E =5mA, f=100MHz www.cj-elec.com 2www.cj-elec.com E,Mar,2016
0.1 1 10 0.1 100 11 0 100 1000 0.1 1 10 100 100 1000 0 5 10 15 20 0 25 50 75 100 125 150 100 150 200 1E-3 0.01 0.1 OFF Characteristics 0.3 ON Characteristics T a =25 T a =100 V O =0.3V 30.3 30 OUTPUT CURRENT I O (mA) INPUT VOLTAGE V I(ON) (V) I O I O 300 30.5 V O(ON) T a =25 T a =100 I O I =20 OUTPUT VOLTAGE V O(ON) (mV) OUTPUT CURRENT I O (mA) T a =25 T a =100 V O =5V 300 30.3 30 G I OUTPUT CURRENT I O (mA) DC CURRENT GAIN G I V R f=1MHz T a =25 C O CAPACITANCE C O (pF) REVERSE BIAS VOLTAGE V R (V) T a P D POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) T a =100 T a =25 0.3 0.03 3E-3 V CC =5V OUTPUT CURRENT I O (mA) INPUT VOLTAGE V I(OFF) (V) www.cj-elec.com 3www.cj-elec.com E,Mar,2016 UMD12 N(NPN) Typical Characteristics
0.0 0.5 1.0 1.5 2.0 2.5 3.0 -0.01 -0.1 -10 -0.1 -1 -10 -100 -0.1 -10 -100 -0.1 -1 -10 -100 100 1000 0 25 50 75 100 125 150 100 150 200 -1 -10 -100 -10 -100 -1000 OFF Characteristics f=1MHz T a =25 C O —— V R OUTPUT CAPACITANCE C O (pF) REVERSE VOLTAGE V R (V) T a =100 T a =25 o C V CC =-5V OUTPUT CURRENT I (mA) INPUT VOLTAGE V I(OFF) (V) ON Characteristics T a =25 T a =100 V O =-0.3V OUTPUT CURRENT I O (mA) INPUT VOLTAGE V I(ON) (V) T a =100 T a =25 DC CURRENT GAIN G I OUTPUT CURRENT I O (mA) V O =-5V G I —— I O P D —— T a POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) V O(ON) —— I O T a =25 T a =100 I O I =20 OUTPUT VOLTAGE V O(ON) (mV) OUTPUT CURRENT I O (mA) -3000 www.cj-elec.com 4www.cj-elec.com E,Mar,2016 UMD12 N(PNP) Typical Characteristics
SOT-363 Suggested Pad Layout www.cj-elec.com 5www.cj-elec.com E,Mar,2016 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP
www.cj-elec.com 6www.cj-elec.com E,Mar,2016