UMD10N JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD UMD10N

FEATURES

z Both the DTC123J chip and DTA123J chip in a package z Mounting possible with SOT-36 3 automatic mounting machines z Transistor elements are independ ent, eliminating interference z Mounting cost and area be cut in half Marking: D10 T Absolute maximum ratings (Ta=25℃) Parameter Symbol Value Unit Supply voltage V CC 50 V Input voltage V IN -5~12 V I O 100 Output current I C(MAX) 100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ T Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions V I(off) 0.5 V CC =5V, I O =100μA Input voltage V I(on) 1.1 V V O =0.3V, I O =5mA Output voltage V O(on) 0.1 0.3 V I O I =5mA/0.25mA Input current I I 3.6 mA V I =5V Output current I O(off) 0.5 μA V CC =50V, V I DC current gain G I 80 V O =5V, I O =10mA Input resistance R 1.54 2.2 2.86 K Ω - Resistance ratio R 17 21 26 - Transition frequency f T

250 MHz V

=10V, I E =5mA, f=100MHz JC(T SOT-363 Dual Digital Transistors (NPN+PNP) www.cj-elec.com 1www.cj-elec.com E,Mar,2016 Digital Transistors (Built-in Resistors)

T Absolute maximum ratings (Ta=25℃) Parameter Symbol Limits Unit Supply voltage V CC -50 V Input voltage V IN -12~5 V I O -100 Output current I C(MAX) -100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ T Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions V I(off) -0.5 V CC =-5V, I O =-100μA Input voltage V I(on) -1.1 V V O =-0.3V, I O =-5mA Output voltage V O(on) -0.1 -0.3 V I O I =-5mA/-0.25mA Input current I I -3.6 mA V I =-5V Output current I O(off) -0.5 μA V CC =-50V, V I DC current gain G I 80 V O =-5V, I O =-10mA Input resistance R 1.54 2.2 2.86 K Ω - Resistance ratio R 17 21 26 - Transition frequency f T =-10V, I E =-5mA, f=100MHz www.cj-elec.com 2www.cj-elec.com E,Mar,2016

0.01 0.1 0.1 1 10 100 0.1 100 11 0 1 0 0 100 1000 0 25 50 75 100 125 150 100 150 200 048 1 2 1 6 2 0 0.1 1 10 100 100 1000 0.3 T a =100 T a =25 OFF Characteristics 0.3 0.03 V CC =5V OUTPUT CURRENT I (mA) INPUT VOLTAGE V I(OFF) (V) ON Characteristics T a =25 T a =100 V O =0.3V 30.3 30 OUTPUT CURRENT I O (mA) INPUT VOLTAGE V I(ON) (V) 300 303 V O(ON) —— I O T a =25 T a =100 I O I =20 OUTPUT VOLTAGE V O(ON) (mV) OUTPUT CURRENT I O (mA) UMD10N(NPN) P D —— T a POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) OUTPUT CAPACITANCE C O (pF) f=1MHz T a =25 C O —— V R REVERSE BIAS VOLTAGE V R (V) T a =25 T a =100 V O =5V 300 30.3 30 G I —— I O OUTPUT CURRENT I O (mA) DC CURRENT GAIN G I www.cj-elec.com 3www.cj-elec.com E,Mar,2016 Typical Characteristics

-0.1 -1 -10 -100 -0.1 -10 -100 -1 -10 -100 -10 -100 -1000 -0.1 -1 -10 -100 -10 -100 -1000 -0.01 -0.1 -10 0 25 50 75 100 125 150 100 150 200 OFF CharacteristicsON Characteristics V O =-0.3V INPUT VOLTAGE V I(ON) (V) OUTPUT CURRENT I O (mA) V O(ON) —— I O I O I =20 OUTPUT VOLTAGE V O(ON) (mV) OUTPUT CURRENT I O (mA) -0.5 T a =25 T a =100 f=1MHz T a =25 C O —— V R OUTPUT CAPACITANCE C O (pF) REVERSE BIAS VOLTAGE V R (V) G I —— I O V O =-5V DC CURRENT GAIN G I OUTPUT CURRENT I O (mA) T a =25 T a =100 V CC =-5V OUTPUT CURRENT I O (mA) INPUT VOLTAGE V I(OFF) (V) T a =25 T a =100 —— T a P D POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) www.cj-elec.com 4www.cj-elec.com E,Mar,2016 UMD10N(PNP) Typical Characteristics

SOT-363 Suggested Pad Layout www.cj-elec.com 5www.cj-elec.com E,Mar,2016 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

www.cj-elec.com 6www.cj-elec.com E,Mar,2016