UMA3N HTSEMI | Alldatasheet
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Technical content
General purpose transistors (dual transistors)
FEATURES
z Two DTA143T chips in a package z Mounting cost and area be cut in half Marking: A3 Equivalent circuit Absolute maximum ratings (Ta=25℃) Symbol Parameter Limits Unit V CBO Collector-Base Voltage -50 V V CEO Collector-Emitter Voltage -50 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -100 mA P C Collector Dissipation 150 mW T j Junction temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-50μA,I E =0 -50 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA,I B =0 -50 V Emitter-base breakdown voltage V (BR)EBO I E =-50μA,I C =0 -5 V Collector cut-off current I CBO V CB =-50V,I E =0 -0.5 μA Emitter cut-off current I EBO V EB =4V,I C =0 - 0.5 μA DC current gain h FE V CE =-5V,I C =-1mA 100 600 Collector-emitter saturation voltage V CE(sat) I C =-5mA,I B =-0.25mA -0.3 V Transition frequency f T V CE =-10V,I C =-5mA, f=100MHz 250 MHz Input resistor R 3.29 4.7 6.11 K Ω www.htsemi.comsemiconductor JinYu Date:2011/ 05