UFT150-28 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 O C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V(BR)DSS ID = 50 mA V GS = 0 V 65 V IDSS VDS = 28 V V GS = 0 V 2.5 mA IGSS VDS = 0 V V GS = 20 V 1.0 µA VGS(th) ID =100 mA V DS = 10 V 1.0 3.0 6.0 V VDS(on) ID = 5.0 A V GS = 10 V 1.5 V gfs ID = 2.5 A V DS = 10 V 2.0 3.0 mhos Ciss Coss Crss VDS = 28 V V GS = 0 V f = 1.0 MHz 180 200 pF Gps η ψ VDD = 28 V I DQ = 2 X 100 mA POUT = 200 W f = 225 MHz 10:1 --- dB --- RF POWER FIELD-EFFECT TRANSISTOR UFT150-28 DESCRIPTION: The ASI UFT150-28 is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz. MAXIMUM RATINGS ID 26 A VDSS 65 V PDISS 400 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θJC 0.44 OC/W PACKAGE STYLE .400 BAL FLG 1 = DRAIN 2 = DRAIN(2) 3 = GATE(1) 4 = GATE(2) 5 = SOURCE (1&2) -CASE