UD0018A DOINGTER | Alldatasheet
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Channel MOSFET uses advanced SGT technology and www.doingter.cn — 1 — Description： This N- design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=40A,RDS(ON)<20mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃1 40 A Continuous Drain Current-TC=100℃ --- Pulsed Drain Current2 120 EAS Single Pulse Avalanche Energy5 30 mJ PD Power Dissipation3 72 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.74 ℃/W RƟJA Thermal Resistance Junction to mbient4 62 ℃/W D S G UD0018A All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=8A --- 17 20 mΩ VGS=4.5V,ID=6A --- --- 26 Dynamic Characteristics4 Ciss Input Capacitance VDS=50V, VGS=0V, f=1MHz --- 1190.6 --- pF Coss Output Capacitance --- 194.6 --- Crss Reverse Transfer Capacitance --- 4.1 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=50V,ID=10A,RG=2.2Ω VGS=10V --- 17.8 --- ns tr Rise Time --- 3.9 --- ns td(off) Turn-Off Delay Time --- 33.5 --- ns tf Fall Time --- 3.2 --- ns Qg Total Gate Charge VGS=10V, VDS=50V, ID=8A --- 19.8 --- nC Qgs Gate-Source Charge --- 2.4 --- nC Qgd Gate-Drain “Miller” Charge --- 5.3 --- nC Drain-Source Diode Characteristics Symbol Parameter Conditions Min Typ Max Units VSD Source-Drain Diode Forward Voltage VGS=0V,IS=8A --- --- 1.3 V UD0018A All d ata sheet.com
www.doingter.cn — 3 — LS Continuous Source Current VGS\\<Vth --- --- 40 A LSp Pulsed Source Current --- --- 120 Trr Reverse Recovery Time --- 50.2 --- NS Qrr Reverse Recovery Charge --- 95.1 --- NC Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) IS=8 A, di/dt=100 A/μs 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. 5) VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 ℃. UD0018A All d ata sheet.com
www.doingter.cn — 4 — UD0018A 0086-0755-8278-9056 All d ata sheet.com