TSM5NB50CP DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=500V,ID=4A,RDS(ON)<1.4Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current-TC=25℃ 4 A Continuous Drain Current-TC=100℃ 2.4 Pulsed Drain Current1 16 EAS Single Pulse Avalanche Energy1 300 mJ PD Power Dissipation,TC=25℃ 2.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.6 ℃/W RƟJA Thermal Resistance,Junction to Ambient 50* D S G * When mounted on the minimum pad size recommended (PCB Mount) TSM5NB50CP All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 500 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=500V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=2A --- 1.14 1.4 mΩ VGS=4.5V,ID=0A --- --- --- GFS Forward Transconductance4 VDS=40V, ID=2A --- 5.2 --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 480 625 pF Coss Output Capacitance --- 80 105 Crss Reverse Transfer Capacitance --- 15 20 Switching Characteristics4.5 td(on) Turn-On Delay Time VDD=250V, ID=5A, VGS=10V,RGEN=25Ω --- 12 35 ns tr Rise Time --- 46 100 ns td(off) Turn-Off Delay Time --- 50 110 ns tf Fall Time --- 48 105 ns Qg Total Gate Charge VGS=10V, VDS=400V, ID=5A --- 18 24 nC Qgs Gate-Source Charge --- 2.2 --- nC Qgd Gate-Drain “Miller” Charge --- 9.7 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=1A --- --- 1.4 V TSM5NB50CP All d ata sheet.com
※ Not es : 1. Z θ JC (t) = 2.6 ℃ /W M ax. 2. D uty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) single pulse D=0. 5 0.02 0.2 0.05 0.1 0.01 Z θ JC (t), Thermal Response t1 , Square Wave Pulse Duration [sec] PDM www.doingter.cn — —5 0086-0755-8278-9056 TSM5NB50CP All d ata sheet.com