TSM4872CS

TSM4872CS DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=10.3A,RDS(ON)<8mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current -Continuous1 (TA=25℃ ) 10.3 ADrain Current -Continuous1 (TA=70℃ ) 8.2 IDM Drain Current – Pulsed2 42 EAS Single Pulse Avalanche Energy3 61 mJ IAS Avalanche Current 35 A PD Power Dissipation4 (TA=25℃ ) 1.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 36 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 85 G D D D DS1 S S TSM4872CS All d ata sheet.com

www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Drain-Source Leakage Current VDS=24V , VGS=0V,TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V,TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.5 2.5 V RDS(ON) Static Drain-Source On Resistance2 VGS=10V,ID=10A --- 7 8 mΩ VGS=4.5V,ID=8A --- 11 14 mΩ GFS Forward Transconductance VDS=5V, ID=10A --- 5.8 --- S Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 1300 1840 pFCoss Output Capacitance --- 160 225 Crss Reverse Transfer Capacitance --- 130 180 Switching Characteristics td(on) Turn-On Delay Time VDD=15V,ID=10A RG=3.3Ω, VGS=10V --- 6.2 12.4 ns tr Rise Time --- 59 106 ns td(off) Turn-Off Delay Time --- 27.6 55 ns tf Fall Time --- 8.4 16.8 ns Qg Total Gate Charge VGS=4.5V, VDS=15V, ID=10A --- 12.6 17.6 nC Qgs Gate-Source Charge --- 4.2 5.9 nC Qgd Gate-Drain “Miller” Charge --- 5.1 7.1 nC RG Gate Resistance Gate Resistance --- 2.2 3.8 Ω TSM4872CS All d ata sheet.com

www.doingter.cn — 3 — Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=1A,TJ=25℃ --- --- 1.2 V IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 10.3 A ISM Pulsed Source Current2,5 --- --- 42 A Trr Body Diode Reverse Recovery Time IF=10A , dI/dt=100A/µs , TJ=25℃ --- 12.5 --- Ns Qrr Body Diode Reverse Recovery Charge --- 5 --- Nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=35A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 0 0.5 1 1.5 2 2.5 3 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=10A 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) IS -Source Current(A) TJ=150℃ TJ=25℃ Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics of reverse diode Fig.4 Gate-Charge Characteristics TSM4872CS All d ata sheet.com

www.doingter.cn — 4 — 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance diode Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 100 1000 10000 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 VDS (V) ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance TSM4872CS

www.doingter.cn — 5 — Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform TSM4872CS 0086-0755-8278-9056