TSM35N10CP DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=36A,RDS(ON)<24mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current (TC=25℃) 36 A Continuous Drain Current(TC=100℃) 18 A IDM Drain Current-Pulsed1 112 A EAS Single pulsed avalanche energy2 76 mJ IAS Single Pulse Avalanche Current2 39 A PD Power Dissipation (TC=25℃) 53 W Power Dissipation-Derate above 25℃ 0.42 W/℃ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.37 ℃/W D S G TSM35N10CP All d ata sheet.com
www.doingter.cn — 2 — RƟJA Thermal Resistance,Junction to Ambient 62 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V,TJ=25℃ --- --- 1 μA VGS=0V, VDS=80V,TJ=125℃ --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.5 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=14A --- 20 24 mΩ VGS=4.5V,ID=10A --- 27 35 GFS Forward Transconductance VDS=10V , ID=3A --- 9 --- S Dynamic Characteristics Ciss Input Capacitance VDS=50V, VGS=0V, f=1MHz --- 600 1180 pFCoss Output Capacitance --- 480 950 Crss Reverse Transfer Capacitance --- 24 48 Switching Characteristics td(on) Turn-On Delay Time3,4 VDD=50V, ID=1A, VGS=10V,RG=3.3Ω --- 12.5 25 ns tr Rise Time3,4 --- 11 22 ns td(off) Turn-Off Delay Time3,4 --- 32 64 ns tf Fall Time3,4 --- 13 26 ns Qg Total Gate Charge3,4 VGS=10V, VDS=50V, ID=10A --- 9.8 18 nC Qgs Gate-Source Charge3,4 --- 1.8 2.5 nC ℃/W Qgd Gate-Drain Charge3,4 --- 2.6 4 nC TSM35N10CP All d ata sheet.com
www.doingter.cn — 3 — RG Gate Resistance VGS=0V , VDS=0V , F-1MHz --- 0.8 --- V Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=1A,TJ=25℃ --- --- 1 V IS Continuous Source Current VG=VD=0V , Force Current --- --- 130 A ISM Pulsed Source Current --- --- 260 A trr Reverse Recovery Time VR=100 V,IS=10 A, di/dt=100 A/μs --- 99 --- Ns qrr Reverse Recovery Charge --- 164 --- nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) 1. Repetitive Rating : Pulsed width limited by maxi mum junction temperature. 2. V DD=50V,L=0.1mH,IAS=39A.,RG=25Ω , Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature . ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. T Fig.2 Normalized RDSON vs. T J Normalized On Resistance (mΩ ) Fig.3 Normalized Vth vs. TJ Normalized Gate Threshold V oltage (V) Fig. 4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) TC , Case Temperature (℃ ) TJ , Junction Temperature (℃ ) TJ , Junction Temperature (℃ ) Qg , Gate Charge (nC) ,TJ=25℃ TSM35N10CP All d ata sheet.com
www.doingter.cn — 4 — Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area Normalized Thermal Response (RθJC) ID , Drain Current (A) VDS , Drain to Source V oltage (V)Square Wave Pulse Duration (s) Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform TSM35N10CP 0086-0755-8278-9056 All d ata sheet.com