TSF10N65M DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=650V,ID=10 A,RDS(ON)<0..78Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current- TC=25℃ 10 A Continuous Drain Current-TC=100℃ 6.3 Pulsed Drain Current1 40 EAS Single Pulse Avalanche Energy2 560 mJ PD Power Dissipation 27 W IAR 10 A EAR 45 MJ Dv/dt 5 TJ, TSTG Operating and Storage Junction Temperature Range -55-+150 ℃ Thermal Characteristics： Repetitive Avalanche Energy Peak Diode Recovery dv/ Avalanche Current 1 G D S TSF10N65M All d ata sheet.com
www.doingter.cn — 2 — Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case ℃/W RƟJA Thermal Resistance,Junction to Ambient Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 650 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=650V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=5A --- Ω GFS Forward Transconductance VDS=40V, ID=4A --- 11 --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- --- pF Coss Output Capacitance --- --- Crss Reverse Transfer Capacitance --- --- Switching Characteristics td(on) Turn-On Delay Time VDD=325V, ID=10A, RGEN=25Ω. --- --- ns tr Rise Time --- --- ns td(off) Turn-Off Delay Time --- --- ns tf Fall Time --- --- ns Qg Total Gate Charge VGS=10V, VDS=520V, ID=10A --- --- nC Qgs Gate-Source Charge --- --- nC --- 4.63 45.5 0.63 0.78 1189 161 3.6 6.2 TSF10N65M All d ata sheet.com
Figure 11. Transient Thermal Response Curve