TSD5N65M DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=650V,ID=5A,RDS(ON)<2.7Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current-TC=25℃ 5 A Continuous Drain Current-TC=100℃ 2.5 IDM Pulsed Drain Current(Note 1) 25 A EAS Single Pulsed Avalanche Energy (Note 2) 80 mJ IAR Avalanche Current (Note 1) 5 A EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5 V/ns PD Power Dissipation,TC=25℃ 24.5 W Power Dissipation-Derate above 25°C 0.2 W/℃ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ D S G TSD5N65M All d ata sheet.com
www.doingter.cn — 2 — Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 5.1 ℃/W RƟJA Thermal Resistance, Junction-to-Ambient 45.3 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics V(BR)DSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 650 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=650V --- --- 1 μA VGS=0V, VDS=520V,TC = 125℃ --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=2.5A --- 2.3 2.7 Ω GFS Forward Transconductance VDS = 40 V, ID = 2 .5A(Note 4) --- 3.8 --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 400 --- pFCoss Output Capacitance --- 55 --- Crss Reverse Transfer Capacitance --- 1.3 --- Switching Characteristics td(on) Turn-On Delay Time VDD=325V,ID=5A, RG =25Ω (Note 4,5) --- 7 --- ns tr Rise Time --- 22 --- ns td(off) Turn-Off Delay Time --- 15 --- ns tf Fall Time --- 23 --- ns Qg Total Gate Charge VDS=520V, VGS=10V, ID=5A --- 13 --- nC Thermal Characteristics： TSD5N65M All d ata sheet.com
Figure 11. Transient Thermal Response Curve