TSD5N60M

TSD5N60M DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=600V,ID=4A,RDS(ON)<2.5Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current-TC=25℃ 4 A Continuous Drain Current-TC=100℃ 2.5* Pulsed Drain Current1 16* EAS Single Pulse Avalanche Energy2 240 mJ PD Power Dissipation,TC=25℃4 51 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.5 ℃/W RƟJA Thermal Resistance,Junction to Ambient 83 D S G TSD5N60M All d ata sheet.com

www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 600 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=600V --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=2A --- 2 2.5 Ω VGS=4.5V,ID=4A --- 50 60 GFS Forward Transconductance 4 VDS=40V, ID=2A --- 4.7 --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 710 920 pF Coss Output Capacitance --- 65 85 Crss Reverse Transfer Capacitance --- 14 19 Switching Characteristics4.5 td(on) Turn-On Delay Time VDD=300V, ID=4A, VGS=10V,RGEN=25Ω --- 20 50 ns tr Rise Time --- 55 120 ns td(off) Turn-Off Delay Time --- 70 150 ns tf Fall Time --- 55 120 ns Qg Total Gate Charge VGS=10V, VDS=480V, ID=4A --- 27 30 nC Qgs Gate-Source Charge --- 3.6 --- nC Qgd Gate-Drain “Miller” Charge --- 13.1 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=4A --- --- 1.4 V TSD5N60M All d ata sheet.com

www.doingter.cn — 3 — trr Reverse Recovery Time4 330 --- Ns qrr Reverse Recovery Charge4 2.67 --- nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) 1：Pulse width limited by maximum junction temperature 2：L=25mH, I AS=4.0A, V DD=50V, R G=25 Ω,Starting TJ=25℃ 3 ： ISD ≤4.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting TJ=25℃ 4：Pulse Test：Pulse Width ≤300μs,Duty Cycle≤2％ 5：Essentially independent of operating temperature On-Region Characteristics Transfer Characteristics 2468 1 0 0.1 Notes： 1.250μs pulse test 2.VDS=40V 150℃ ID [A] VGS [V] 25℃ VGS Top 15V 10V 6.5V 5.5V Bottom 5V Notes： 1. 250μs pulse test 2. TC=25℃ ID [A] VDS [V] VGS=0V, I S=4.0A dIF/dt=100A/μs On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature0.1 Notes： 1. 250μs pulse test 2. VGS=0V 25℃ 150℃ VSD [V] IDR [A] 0123456 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 Note ：Tj=25℃ VGS=10V RDS (on) [ Ω ] ID [A] VGS=20V TSD5N60M All d ata sheet.com

www.doingter.cn — 4 — Capacitance Characteristics Gate Charge Characteristics 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 2 6 2 8 3 0 VDS=480V VDS=300V VDS=120V Qg Toltal Gate Charge [nC] VGS Gate Source Voltage[V] -75 -50 -25 0 25 50 75 100 125 150 0.90 0.95 1.00 1.05 1.10 1.15 Notes： 1. VGS=0V 2. ID=250μA Tj []℃ BVDSS (Normalized) Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature Maximum Safe Operating Area Maximum Safe Operating Area -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes： 1. VGS=10V 2. ID=2.0A RDS (on ) (Normalized) Tj[]℃ TSD5N60M All d ata sheet.com

www.doingter.cn — —5 Maximum Drain Current vs. Case Temperature Transient Thermal Response Curve TSD5N60M 0086-0755-8278-9056 All d ata sheet.com