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Technical content

Features

◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) General Description This device is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. 2.T2 3.Gate 1.T1 Symbol TR4A60 TO- 2 3 Apr, 2003. Rev. 0 July, 2010. Rev. 2

Electrical Characteristics

Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave VTM Peak On-State Voltage ITM = 5.5A, tp=380㎲ -- -- 1.55 V GT1 Ⅰ Gate Trigger Current VD = 12V, RL=30 Ω ── 10 mAI - GT1 Ⅱ ─- 10 I - GT3 Ⅲ ─- 10 I+GT4 ,9 25 GT1 Ⅰ Gate Trigger Voltage VD = 12 V, RL=30 Ω --- --- 1.5 V --- --- 1.5 V-GT1 Ⅱ V - GT3 Ⅲ ── 1.5 V+GT4 IV --- --- 1.5 VGD Non-Trigger Gate Voltage Tj = 125 °C, VD=VDRM RL=3.3kΩ 0.2 --- ─ V dv/dt Critical Rate of Rise Off-State Voltage Tj = 125 °C, VD=2/3 VDRM 50 ── V/㎲ IH Holding Current IT=0.2A --- --- 15 mA TR4A60

-50 0 50 100 150 0.1 VGT (t o VGT (25 o Junction Temperature [ o 60Hz 50Hz Surge On-State Current [A] Time (cycles) 012345 100 110 120 130 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] 012345 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] 125 o C o C On-State Current [A] On-State Voltage [V] 25 PG(AV) = 0.5W PGK = 5W IGM=2A VGK = 5V VGD = 0.2V Gate Voltage [V] Gate Current [mA] 75$ Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle

75$0 Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature -50 0 50 100 150 0.1 I GT3 I GT1 I GT1 I GT3 IGT (t o IGT (25 o Junction Temperature [ o Transient Thermal Impedance [ o C/W] Time (sec)

Dim. mm Inch A 7.5 7.9 0.295 0.311 B 10.8 11.2 0.425 0.441 C 14.2 14.7 0.559 0.579 D 2.7 2.9 0.106 0.114 E 3.8 0.150 F 2.5 0.098 G 1.2 1.5 0.047 0.059 H 2.3 0.091 I 4.6 0.181 J 0.48 0.62 0.019 0.024 K 0.7 0.86 0.028 0.034 L 1.4 0.055 φ 3.2 0.126 75$ 1. T1 2. T2 3. Gate A B C D E F G H I J K L φ

Dim. mm Inch A 7.5 7.9 0.295 0.311 B 10.8 11.2 0.425 0.441 C 14.2 14.7 0.559 0.579 D 2.7 2.9 0.106 0.114 E 3.8 0.150 F 2.5 0.098 G 1.2 1.5 0.047 0.059 H 2.3 0.091 I 4.6 0.181 J 0.48 0.62 0.019 0.024 K 0.7 0.86 0.028 0.034 L 1.4 0.055 M 5.0 0.197 φ 3.2 0.126 TR4A60 1. Gate 2. T2 3. T1 A B C D E F G H I J K Lφ M