DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 8A ) ◆ Isolated, Non-isolated Type General Description Apollo Electron’s SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suit able for over voltage protection, mo tor control circuit in power tool, inrush cur- rent limit circuit and heating control system. 2. Anode 3.Gate 1.Cathode Symbol IT(RMS) = A ITSM = 0A BVDRM = 600V Standard Gate Silicon Controlled Rectifiers TO-220 1 2 3 copyright @ Apollo Electron Co., Ltd. All rights reserved. 2 3 TO-220F

Electrical Characteristics ( Tj = 25 °C unless otherwise noted ) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VAK = VDRM ─GGGGGGGGGGTT 1 mA VTM Peak On-State Voltage (1) IT = 8 A --- ─ 1.7 V IGT Gate Trigger Current (2) VD = 12 V, RL=100 Ω ──20 mA V GT Gate Trigger Voltage (2) VD = 12 V, RL=100 Ω ── 1.3 V dv/dt Critical Rate of Rise Off-State Voltage Linear slope up to V =D = VDRM 67% , Gate open Tj = 110°C 20 ─ ─ V/us IH Holding Current VD = 24V, IGT=50mA ──30 mA CP6C60

-50 0 50 100 150 0.1 IGT(t o IGT(25 o Junction Temperature[ o Transient Thermal Impedance [ o C/W] Time (sec) 100 125 o C o C On-State Current [A] On-State Voltage [V] 01234 100 120 140 θ = 180 o Max. Allowable Case Temperature [ o Average On-State Current [A] IGM(2A) VGD(0.2V) PG(AV)(0.5W) PGM(5W) VGM(5V) o C Gate Voltage [V] Gate Current [mA] θ : Conduction Angle 360° θ 2ππ CP6C60 -50 0 50 100 150 0.1 VGT(t o VGT(25 o Junction Temperature[ o Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature Fig 3. Typical Forward Voltage Fig 4. Thermal Response Fig 6. Typical Gate Trigger Current vs. Junction Temperature Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature

θ = 180 o θ = 120 o θ = 90 o θ = 60 o θ = 30 o Max. Average Power Dissipation [W] Average On-State Current [A] -50 0 50 100 150 0.1 IH(t o IH(25 o Junction Temperature[ o CP6C60 Fig 8. Power DissipationFig 7. Typical Holding Current

A 0.14 0.19 3.56 4.83 A1 0.02 0.055 0.51 1.4 A2 0.08 0.115 2.03 2.92 b 0.015 0.04 0.38 1.02 b2 0.045 0.07 1.14 1.78 c 0.014 0.024 0.36 0.61 D 0.56 0.65 14.22 16.51 e 0.096 0.104 2.44 2.64 E 0.38 0.42 9.65 10.67 H1 0.23 0.27 5.84 6.86 L 0.5 0.58 12.7 14.73 L1 - 0.25 - 6.35 ￠P 0.139 0.161 3.53 4.09 Q 0.1 0.135 2.54 3.43 INCHES MILLIMETERSDIM

Dim. mm Inch A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 13.47 13.73 0.530 0.540 E 6.05 6.15 0.238 0.242 F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084 I 2.57 2.83 0.101 0.111 J2 .54 0 .100 K5 .08 0 .200 L 2.51 2.62 0.099 0.103 M 1.25 1.55 0.049 0.061 N 0.45 0.63 0.018 0.025 O 0.6 1.0 0.024 0.039 ȃ 3.7 0.146 ȃ 1 3.2 0.126 ȃ 2 1.5 0.059 CP6C60 1. Cathode 2. Anode 3. Gate A B C I G L 1 M EF ȃ 1 H K N O J D ȃ 2 ȃ