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◆ Repetitive Peak Off-State Voltage : 800V ◆ R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt General Description This device is suitable for low po wer AC switching applicat ion, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay where high sensi- tivity is required in all four quadrants. IT(RMS) = 1A ITSM = 10A VDRM = 800V TO-92 copyright @ Apollo Electron Co., Ltd. All rights reserved. 3.T2 2.Gate 1.T1 Symbol This device may substitute for Z0107MA, BT131, BCR1AM-12 series.

Electrical Characteristics (Tj=25°C unless otherwise specified) Ratings Symbol Items Conditions Unit Min. Typ. Max. Repetitive Peak Off-State V = VI D DRM, Single Phase, Half Wave DRM Current - - 0.5 mA VTM Peak On-State Voltage ITM = 1 A, tp=380㎲ ­ - 1 . 6 V GT1 I - - 10 ­ ­ ~~~ I - GT1 II - - 10 Gate Trigger Current VD = 12V, R =100 ΩL mA I - GT3 III - - 10 GT3 IV - - 30 GT1 I -- 1 . 8 V-GT1 ,, - - 1.8 V Gate Trigger Voltage VD = 12V, RL=100 Ω GT3 III -- 1 . 8 GT3 IV -- 2 . 0 VGD Non-Trigger Gate Voltage VD=1/2 VDRM 0.1 - - V Critical Rate of Rise Off-State Tj = 110 °C dv/dt - - V/㎲Voltage VD=2/3 VDRM 5 IH Holding Current VD=12V, IT=0.1A - ­ 25 mA TN1A80

-50 0 50 100 150 0.1 VGT (t o V GT1 V GT1 V GT3 V GT3 VGT (25 o Junction Temperature [ o 60Hz 50Hz Surge On-State Current [A] Time (cycles) 100 110 120 130 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] 0.0 0.3 0.6 0.9 1.2 1.5 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] TJ = 125 o C TJ = 25 o C On-State Current [A] On-State Voltage [V] VGD(0.2V) 25 ℃ I GT3 IGM (1A) 25 ℃ I GT1 I GT1 I GT3 PG(AV) (0.1W) PGM (1W) VGM (6V) Gate Voltage [V] Gate Current [mA] Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle

Rθ (J-C) Rθ (J-A) Transient Thermal Impedance [ o C/W] Time (sec) -50 0 50 100 150 0.1 IGT (t o IGT (25 o I GT3 I GT1 I GT1 I GT3 Junction Temperature [ o Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature

Dim. mm Inch A 4.2 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E 0.4 0.016 F 4.43 4.83 0.174 0.190 G 0.45 0.017 H2 .54 0 .100 I2 .54 0 .100 J 0.33 0.48 0.013 0.019 TN1A80 1. T1 2. Gate 3. T2 A B C G E F D H J I

Dim. mm Inch A 4.2 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E 0.4 0.016 F 4.43 4.83 0.174 0.190 G 0.45 0.017 H2 .54 0 .100 I2 .54 0 .100 J 0.33 0.48 0.013 0.019 K 4.5 5.5 0.177 0.216 L 7.8 8.2 0.295 0.323 M 1.8 2.2 0.070 0.086 N 1.3 1.7 0.051 0.067 1. T1 2. Gate 3. T2 TN1A80 A E G H C B D F I J K L M N