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Technical content

Features

◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 25 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) 2.T2 3.Gate 1.T1 Symbol TO-220F TF25A60 Copyright@Apollo Electron Co., Ltd., All rights reserved 1 2 3 General Description This device is fully isol ated package suitable for AC switching appl ication, phase control appli cation such as fan speed and temperature modulati on control, li ghting control and static switching relay. This device may substitute for BTA24-600, BTB24-600 series.

Electrical Characteristics

Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave VTM Peak On-State Voltage ITM = 35A, Inst. tp=380㎲ ─ __ 1.55 V V GT1 Ⅰ Gate Trigger Current VD = 12 V, RL=33 Ω ── 50 mAI - GT1 Ⅱ ── 50 I - GT3 Ⅲ ── 50 GT1 Ⅰ Gate Trigger Voltage VD = 12 V, RL=33 Ω ── 1.5 VV- GT1 Ⅱ ── 1.5 GT3 Ⅲ ── 1.5 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD=VDRM, RL=3.3kΩ 0.2 ---- ----- V dv/dt Critical Rate of Rise Off-State Voltage TJ = 125 °C, VD=2/3 VDRM 40 ---- ---- V/㎲ IH Holding Current IT=0.5A --- -- 80 mA TFA60

-50 0 50 100 150 0.1 V GT1 V GT1 V GT3 VGT (t o VGT (25 o Junction Temperature [ o 120 160 200 240 280 60Hz 50Hz Surge On-State Current [A] Time (cycles) 0 5 10 15 20 25 30 100 110 120 130 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] 0 5 10 15 20 25 30 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] TJ = 125 o C TJ = 25 o C On-State Current [A] On-State Voltage [V] VGD (0.2V) IGM (2A) 25 ℃ PG(AV) (1W) PGM (5W) VGM (10V) Gate Voltage [V] Gate Current [mA] TF25A60 Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle

-50 0 50 100 150 0.1 I GT3 I GT1 I GT1 IGT (t o IGT (25 o Junction Temperature [ o 0.1 Transient Thermal Impedance [ o C/W] Time (sec) TF25A60 Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature Fig 9. Gate Trigger Characteristics Test Circuit A V 33Ω 12V RG A V 33Ω 12V RG A V 33Ω 12V RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ

Dim. mm Inch A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 13.47 13.73 0.530 0.540 E 6.05 6.15 0.238 0.242 F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084 I 2.57 2.83 0.101 0.111 J2 .54 0 .100 K5 .08 0 .200 L 2.51 2.62 0.099 0.103 M 1.23 1.36 0.048 0.054 N 0.45 0.63 0.018 0.025 O 0.6 1.0 0.023 0.039 φ 3.7 0.146 φ 1 3.2 0.126 φ 2 1.5 0.059 TF25A60 1. T1 2. T2 3. Gate A B C I G L 1 M EF φ 1 H K N O J D φ 2 φ

Dim. mm Inch A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 8.4 8.66 0.331 0.341 E 6.05 6.15 0.238 0.242 F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084 I 2.57 2.83 0.101 0.111 J2 .54 0 .100 K5 .08 0 .200 L 2.51 2.62 0.099 0.103 M 1.23 1.36 0.048 0.054 N 0.45 0.63 0.018 0.025 O 0.65 0.78 0.0025 0.031 P 5.0 0.197 φ 3.7 0.146 φ 1 3.2 0.126 φ 2 1.5 0.059 1. T1 2. T2 3. Gate A B C I G L 1 M EF φ 1 H K N O J D φ 2 φ P TF25A60