TPV8100B ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCER IC = 10 mA R BE = 75 Ω 30 V BVCBO IC = 20 mA 65 V BVEBO IE = 10 mA 4.0 V ICER VCE = 28 V R BE = 75 Ω 10 mA hFE VCE = 10 V IC = 2.0 A 30 120 --- Gp VCE = 28 V I cq = 2X50 mA f = 860 MHz 8.5 dB ηηηη VCE = 28 V I cq = 2X50 mA f = 860 MHz 55 % Pout VCE = 28 V I cq = 2X50 mA f = 860 MHz 1.0 dB COMPRESSION (ref = 25 W) 100 W FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL) Pout VCE = 28 V I cq = 2X50 mA f = 860 MHz 125 W Pout VCE = 32 V I cq = 2X25 mA f = 860 MHz 150 W NPN SILICON RF POWER TRANSISTOR TPV8100B DESCRIPTION: The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE:

  • Internal Input, Output Matching
  • Common Emitter Configuration
  • Gold Metalization
  • Emitter Ballasting MAXIMUM RATINGS IC 12 A VCER 40 V RBE = 10 Ω PDISS 215 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θθθθJC 0.8 OC/W PACKAGE STYLE .438X.450 4LFL 1 = COLLECTOR #1 2 = COLLECTOR 3 = BASE #1 4 = BASE #2 5 = EMITTER CASE (COMMON) TPV8100B