TPV695A ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 40 mA 28 V BVCBO IC = 20 mA 45 V BVEBO IE = 5.0 mA 3.0 V ICBO VCB = 20 V 15 mA hFE IC = 500 mA V CE = 20 V 20 80 --- COB VCB = 25 V f = 1.0 MHz 20 pF PG IMD3 VCE = 25 V P OUT = 14 W f = 845 MHz 8.5 -47 dB dBc NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV695A is a high gain push-pull device Designed for high power, band IV & V Transposers and transmitter amplifiers Applications. FEATURES:
- ••• Gold Metalization
- Emitter Ballast Resistors
- Internal Input Matching MAXIMUM RATINGS IC 5.0 A VCE 28 V PDISS 70 W @ TC = 25 °C TJ -50 °C to +200 °C TSTG -50 °C to +200 °C θθθθJC 2.5 °C/W PACKAGE STYLE .250 BAL FLG TPV695A MINIMUM inches / mm .055 / 1.40 .243 / 6.17 .630 / 16.00 B C D E F G A MAXIMUM .670 / 17.01 .255 / 6.48 inches / mm .125 / 3.18 H DIM K L I J .315 / 8.00 .002 / 0.05 .075 1.91 .327 / 8.31 .006 / 0.15 .095 / 2.41 N M .060 / 1.52 .092 / 2.34 .190 / 4.83 K .020 x 45° J F E D C H I G L M .050 x 45° N B A Ø.130 NOM. .065 / 1.65 .555 / 14.10 .739 / 18.77 .565 / 14.35 .750 / 19.05