TPV596A ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCEO IC = 20 mA 24 V BVEBO IE = 4.0 mA 3.5 V ICBO VCB = 28 V 1.0 mA hFE VCE = 5.0 V IC = 100 mA 15 120 --- COB VCB = 28 V f = 1.0 MHz 5.0 pF PG IMD1 VCE = 20 V I E = 220 mA f = 860 MHz POUT = 0.5 W PIN = 50 mW 11.5 -58 dB dB NPN SILICON RF POWER TRANSISTOR TPV596A DESCRIPTION: The ASI TPV596A is designed for MATV amplifiers up to 860 MHz and 500 mW band V TV transposer stages. FEATURES:
- ••• Difused emiter ballast resistors
- PG = 12 dB at 0.5 W/ 860 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 0.7 A VCBO 45 V VCEO 24 V VEBO 3.5 V PDISS 8.75 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθJC 20 °C/W PACKAGE STYLE .280 4L STUD MINIMUM inches / mm .003 / 0.08 .270 / 6.86 .117 / 2.97 B C D E F G A MAXIMUM .285 / 7.24 .137 / 3.48 .007 / 0.18 inches / mm H .245 / 6.22 .255 / 6.48 DIM 1.010 / 25.65 1.055 / 26.80 I J .217 / 5.51 .220 / 5.59 K .175 / 4.45 .572 / 14.53 .640 / 16.26 .130 / 3.30 .230 /5.84 G K H F E D C B 45° A #8-32 UNC I J E E C B