TPV596 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 20 mA 24 V BVCBO IC = 1.0 mA 45 V BVCER IC = 20 mA R BE = 10 Ω 50 V BVEBO IE = 0.25 mA 3.5 V ICBO VCB = 28 V 0.45 mA hFE IC = 100 mA V CE = 5.0 V 15 120 --- COB VCB = 28 V f = 1.0 MHz 5.0 pF PG VCE = 20 V I E = 0.22 A f = 860 MHz 11.5 12 dB SILICON N-CHANNEL RF POWER MOSFET TPV596 DESCRIPTION: The TPV596 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz. FEATURES:

  • PG = 12 dB min. at 0.5 W/ 860 MHz
  • Common Emitter
  • Omnigold™ Metallization System MAXIMUM RATINGS IC 0.7 A VCE 24 V TJ -65 °C to +200 °C TSTG -65 °C to +150 °C PDISS 8.75 W @ TC = 25 O C PACKAGE STYLE 280 4L STUD 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER