TPV595

TPV595 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 O C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 40 mA 25 28 V BVCER IC = 20 mA R BE = 51 Ω 40 V BVCBO IC = 20 mA 45 V ICBO VCB = 20 V 5.0 mA BVEBO IE = 5 mA 3.0 V hFE VCE = 20 V IC = 500 mA 10 -- COB VCB = 25 V 20 pF PG IMD3 VCE = 25 V I C = 2 x 900 mA P REF = 14 W F = 860 MHz Vision = -8 dB Sound = -7 dB SB = -16 dB 8.5 9.5 -47 dB dB NPN SILICON RF POWER TRANSISTOR TPV595 DESCRIPTION: The TPV595 is Designed for Class AB Push Pull, Common Emitter from 470 to 860 MHz Applications. FEATURES: Gold Metalization

• Emitter Ballast Resistors
• Internal Input Matching MAXIMUM RATINGS IC 2 x 2.6 A VCB 45 V PDISS 65 W @ TC = 25 OC TJ -50 OC to +200 OC TSTG -50 OC to +200 OC θJC 2.5 OC/W PACKAGE STYLE .250 BAL FLG MINIMUM inches / mm .055 / 1.40 .243 / 6.17 .630 / 16.00 B C D E F G A MAXIMUM .670 / 17.01 .255 / 6.48 inches / mm .125 / 3.18 H DIM K L I J .315 / 8.00 .002 / 0.05 .075 1.91 .327 / 8.31 .006 / 0.15 .095 / 2.41 N M .060 / 1.52 .092 / 2.34 .190 / 4.83 K .020 x 45° J F E D C H I G L M .050 x 45° N B A Ø.130 NOM. .065 / 1.65 .555 / 14.10 .739 / 18.77 .565 / 14.35 .750 / 19.05 Collector - 2 places Emitter connected to flange Base - 2 places