TPV5051 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 60 mA 30 V BVCBO IC = 20 mA 45 V BVEBO IE = 6.0 mA 4.0 V BVCER IC = 10 mA RBE = 50 Ω 40 V ICEO VCE = 28 V 10 mA hFE VCE = 20 V IC = 800 mA 10 --- Cob VCB = 28 V f = 1.0 MHz (EACH SIDE) 40 pF PG ηηηηC VCE = 28 V P out = 50 W Iq = 2X50 mA f = 860 MHz 6.5 dB NPN SILICON RF POWER TRANSISTOR TPV5051 DESCRIPTION: The TPV5051 is Designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications. FEATURES:
- Gold Metalization
- Diffused Ballast Resistor MAXIMUM RATINGS IC 9.0 A VCEO 30 V VCBO 45 V PDISS 97 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 1.8 °C/W PACKAGE STYLE BMA-2 1 = BASE 2 = BASE 3 = COLLECTOR 4 = COLLECTOR 5 = EMITTER MILLIMETER S INCHES DIM MIN MAX MIN MAX A 20.07 20.57 0.790 0.810 B 6.35 6.85 0.250 0.270 C 4.20 5.02 0.165 0.198 D 1.40 1.65 0.055 0.065 E 1.40 1.65 0.055 0.065 G 1.27 1.77 0.060 0.070 H 1.34 2.43 0.076 0.096 J 0.08 0.12 0.003 0.005 K 4.83 5.33 0.190 0.210 N 6.56 6.80 0.258 0.268 Q 3.18 3.42 0.125 0.135 U 14.03 14.52 0.552 0.572