TPV385 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 35 V BVCER IC = 50 mA R BE = 10 Ω 60 V BVCBO IC = 50 mA 65 V BVEBO IE = 10 mA 4.0 V hFE VCE = 5.0 V IC = 1.0 A 20 100 --- Cob VCB = 30 V f = 1.0 MHz 65 85 pF GP IMD1 VCE = 28 V P out = 14 W f = 225 MHz 14 15 -53 dB dB ψψψψ VCE = 28 V ALL PHASEANGLES f = 225 MHz Pout = 14 W LOAD VSWR = ∝ :1 NO DEGRADATION IN OUTPUT POWER NPN SILICON RF POWER TRANSISTOR TPV385 DESCRIPTION: The ASI TPV385 is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. FEATURES INCLUDE:

  • ••• Gold Metalization
  • Emitter Ballast Resistors
  • Internal Input Matching
  • Common Emitter MAXIMUM RATINGS IC 10 A (CONT) VCB 65 V VCE 35 V TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθJC 1.5 °C/W PACKAGE STYLE 500 6L FLG 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER