TPV3100 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCER IC = 10 mA R BE = 75 Ω 30 V BVEBO IE = 10 mA 4.0 V ICER VCE = 28 V R BE = 75 Ω 10 mA hFE VCE = 10 V IC = 2.0 A 20 150 --- P1dB VCE = 28 V ICQ =2X50 mA Fo = 225 MHz 100 W Pg VCE = 28 V ICQ =2X50 mA Fo = 225 MHz 8.5 9.5 dB NPN SILICON RF POWER TRANSISTOR ASI TPV3100 DESCRIPTION: The ASI TPV3100 is a Class A Common Device Designed for Television Band III Applications. FEATURES INCLUDE:
- Gold Metalization
- Emitter Ballasting
- Internal Matching MAXIMUM RATINGS IC 8.0 A VCC 65 V PDISS 218 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 0.80 °C/W PACKAGE STYLE .400 8L FLG MINIMUM inches / mm .115 / 2.92 .065 / 1.65 .380 / 9.65 B C D E F G A MAXIMUM .125 / 3.18 .390 / 9.91 .075 / 1.91 inches / mm H .645 / 16.38 .655 / 16.64 DIM K L I J .895 / 22.73 .420 / 10.67 .120 / 3.05 .905 / 22.99 .430 / 10.92 .130 / 3.30 O N M .395 / 10.03 .159 / 4.04 .405 / 10.29 .175 / 4.45 .280 / 7.11 .130 / 3.30 D K E .125 F G .1925 J I H N L M 4 x .060 R FULL R AB C O .360 / 9.14 .030 / 0.76 .735 / 18.67 .765 / 19.43