TPT5610 JIANGSU | Alldatasheet
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Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5610 TRANSISTOR (PNP)
FEATURES
PCM: 1 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -25 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10µA, IE=0 -25 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 V Collector cut-off current ICBO VCB=-20V, IE=0 µA Emitter cut-off current IEBO VEB=-5V, IC=0 µA DC current gain hFE VCE=-2V, IC=-500mA 240 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter voltage VBE VCE=-2V, IC=-500mA V Transition frequency fT VCE=-2V, IC=-500mA 350 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz pF CLASSIFICATION OF hFE Rank A B C Range 60-120 85-170 120-240 1 2 3 TO-92L 1. EMITTER 2. COLLECTOR 3. BASE