TPT5609 JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5609 TRANSIST OR (NPN)

FEATURES

z Excellent Linearity of Current Gain z Low saturation voltage z Complementary to TPT5610 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector- Base Voltage 25 V V CEO Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 1 A P C Collector Power Dissipation 0.75 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ TO-92L EMITTER COLLECTOR BASE JC(T www.cj-elec.com 1 /g48/g36/g53/g46/g44/g49/g42 Equivalent Circuit /g3 TPT5609/g32/g39/g72/g89/g76/g70/g72/g3/g70/g82/g71/g72/g3 /g59/g59/g59/g32/g38/g82/g71/g72/g3

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity TO-92L Bulk TO-92L Tape TPT5609 TPT5609-TA E,Aug,2017 /g59/g59/g59 /g122 TPT5609 500pcs/Bag 2000pcs/Box Solid dot = Green molding compound device, if none, the normal device

/g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 aT =25 /g1071 unless otherwise specified www.cj-elec.com 2 E,Aug,2017 Parameter Symbol Test conditions Min Typ Max Unit Collector -base breakdown voltage V(BR)CBO IC =10µA, IE=0 25 V Collector -emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 20 V Emitter-bas e breakdown voltage V(BR) EBO IE=10µA, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 1 µA Emitter cut-off current IEBO VEB=5V, IC=0 1 µA DC curren t gain hFE VCE=2V, IC=500mA 60 240 Collector -emitter saturation voltage VCE(sat ) IC=800mA, IB=80mA 0.5 V Base-emitter volt age VBE VCE=2V, IC=500mA 1 V Tra nsition frequency fT V CE=2V, IC=500mA 190 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 22 pF CLASSIFICA TION OF h FE Rank A B C Range 60-120 85-1 70 120-240

0.1 1 10 100 1000 0 204 0 608 0 1 00 100 150 200 250 1 10 100 1000 100 1000 0 25 50 75 100 125 150 200 400 600 800 0.1 1 10 100 1000 200 400 600 800 1000 0.1 1 10 100 1000 100 150 200 012345678 200 400 600 800 1000 1200 200 400 600 800 1000 0.1 100 1000 f=1MHz IE=0 / IC=0 Ta=25 o C REVERSE VOLT AGE V (V) CAPACITANCE C ( pF) VCB / VEBCob / Cib —— Cib Cob TRANS ITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE=2V Ta=25 o C IC fT — — VCE= 2V Ta=100 o C Ta=25 o C COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE —— COLLECT OR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( )℃ Pc — — Ta 750 COLLECTOR CURRENT IC (mA) BASE-EMIT TER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ Ta=100℃ β=10 ICVBE sat —— Ta=25℃ Ta=100℃ β=10 VCE sat — — IC COLLECTOR-EMITTER SATURATION VOLT AGE VCEs at (mV) COLLECTOR CURRENT IC (mA) CO MMON EMITTER Ta=25℃ 5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA IB=0.5mA COLLECTOR-EM ITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) St atic Characteristic VCE=2V Ta=25℃ Ta=100 o C BASE-EM ITTER VOLTAGE VBE(mV) COLLECTOR CURRENT IC (mA IC —— V BE Typical Characteristics www.cj-elec.com 3 E,Aug,2017

mbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.750 4.050 0.148 0.159 A1 1.280 1.580 0.050 0.062 b 0.380 0.550 0.015 0.022 b1 0.620 0.780 0.024 0.031 c 0.350 0.450 0.014 0.018 D 4.750 5.050 0.187 0.199 D1 4.000 0.157 E 7.850 8.150 0.309 0.321 e 1.270 TYP. 0.050 TYP. e1 2.440 2.640 0.096 0.104 L 13.800 14.200 0.543 0.559 Φ 1.600 0.063 0.000 0.300 0.000 0.012h www.cj-elec.com 4 E,Aug,2017

www.cj-elec.com 5 E,Aug,2017