TPM401 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 40 V BVCEO IC = 1.0 mA 28 V BVEBO IE = 1.0 mA 3.5 V hFE VCE = 5.0 V I C = 100 mA 20 120 --- COB VCB = 28 f = 1.0 MHz 5.0 pF PG VCE = 24 V I C = 200 mA f = 400 MHz POUT = 1.0 W 13 15 dB P1dB VCE = 24 V I C = 200 mA f = 400 MHz 2.0 W NPN RF POWER TRANSISTOR TPM401 DESCRIPTION: The TPM401 is a Common Emitter Device Designed for Class A and AB Amplifier Applications up to 1.0 GHz. FEATURES INCLUDE:
- · High Gain
- · Gold Metallization
- · Emitter Ballasting MAXIMUM RATINGS IC 400 mA VCBO 40 V PDISS 8.75 W @ TC = 25 OC TJ -55 OC to+200 OC TSTG -55 OC to+200 OC qq JC 20 OC/W PACKAGE STYLE 280 4L STUD 1 = Collector 2 = Base 3 & 4 = Emitter