TPCC8062-H DOINGTER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Channel MOSFET uses advanced www.doingter.cn — 1 — Description： This N- SGT to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features： 1) VDS=30V,ID=30 ,RDS(ON) @VGS=10V 2) Improved dv/dt capability 3) Fast switching 4) 100% EAS Guaranteed 5) Green Device Available. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-Continuous (TC=25℃)1 30 A IDM Drain Current – Pulsed 120 A EAS Single Pulse Avalanche Energy 29 mJ IAS 17 A PD Power Dissipation (TC=25℃) 37 W/℃ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 3.4 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62 G D D D D S S Aval anche Current < mΩ5A TPCC8062-H All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Drain-Source Leakage Current VGS=0V, VDS=30V, TJ=25℃ --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 --- 2.2 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 4.1 5 mΩ VGS=4.5V,ID=20A --- 6.5 8 GFS --- 85 --- S Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 960 --- pF Coss Output Capacitance --- 410 --- Crss Reverse Transfer Capacitance --- 60 --- Switching Characteristics td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3 Ω，ID=15A --- 7 --- ns tr Rise Time --- 2.8 --- ns td(off) Turn-Off Delay Time --- 21.4 --- ns tf Fall Time --- 5.3 --- ns Qg Total Gate Charge VDS=15V , VGS=10V , ID=20 --- 3.4 --- nC Qgs Gate-Source Charge --- 3.1 --- nC Qgd Gate-Drain “Miller” Charge --- 17.4 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- 0.7 --- V Forward TransconductanceForward TransconductanceForward TransconductanceForward Transconductance F or w ar d Tr a nsc o n duct ance VDS = 5V, ID = 20A V, ID = 20AVDS= 5 A TPCC8062-H All d ata sheet.com
www.doingter.cn — 3 — Trr Reverse Recovery Time --- 12.3 --- nS Qrr Reverse Recovery Charge --- 17.6 --- nC Typical Characteristics： (TC=25℃ unless otherwise noted) I S = 20 A ,VGS=0V, dls/ d t =100A/ µ S . TPCC8062-H All d ata sheet.com
www.doingter.cn — 4 — TPCC8062-H All d ata sheet.com
www.doingter.cn — —5 TPCC8062-H 0086-0755-8278-9056 All d ata sheet.com