TP86R203NL DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=20A,RDS(ON)<6mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25℃ ) 20 A Drain Current – Continuous (TC=100℃ ) 12.6 IDM Drain Current – Pulsed1 80 PD Power Dissipation (TC=25℃ ) 5.4 W Power Dissipation – Derate above 25℃ 0.043 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 23 ℃/W RƟJA Thermal Resistance,Junction to Ambient 85 G D D D DS1 S S TP86R203NL All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4 --- mV/℃ RDS(ON) Static Drain-Source On Resistance VGS=10V,ID=10A --- 5 6 mΩ VGS=4.5V,ID=5A --- 6.5 9 GFS Forward Transconductance VDS=10V, ID=10A --- 18 --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 1160 1900 pF Coss Output Capacitance --- 200 400 Crss Reverse Transfer Capacitance --- 180 360 Switching Characteristics td(on) Turn-On Delay Time2,3 VDS=15V, ID=15A, RGEN=3.3Ω, VGS=10V --- 7.5 15 ns tr Rise Time2,3 --- 14.5 28 ns td(off) Turn-Off Delay Time2,3 --- 35.2 60 ns tf Fall Time2,3 --- 9.6 19 ns TP86R203NL All d ata sheet.com
www.doingter.cn — 3 — Qg Total Gate Charge2,3 VGS=4.5V, VDS=15V, ID=20A --- 11.1 22 nC Qgs Gate-Source Charge 2,3 --- 1.85 3.7 nC Qgd Gate-Drain “Miller” Charge2,3 --- 6.8 13 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=1A,TJ=25℃ --- --- 1 V IS Continuous Source Current VG=VD=0V , Force Current --- --- 20 A ISM Pulsed Source Current --- --- 40 A Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance (m) TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage(V) VGS , Gate to Source V oltage (V) TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform TP86R203NL All d ata sheet.com
www.doingter.cn — 4 — Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1
2 L x IAS
Fig.8 EAS WaveformFig.7 Switching Time Waveform TP86R203NL 0086-0755-8278-9056 All d ata sheet.com