TP2314A ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 16 V BVCES IC = 50 mA 36 V BVCBO IC = 50 mA 36 V ICBO VCB = 15 V 1.0 mA BVEBO IE = 1.0 mA 4.0 V hFE VCE = 5.0 V I C = 50 mA 20 200 --- Cob VCB = 12.5 V f = 1.0 MHz 15 pF GPE hh VCC = 6.0 V Pout = 1.0 W f = 175 MHz 6.0 dB NPN SILICON HIGH FREQUENCY TRANSISTOR TP2314A DESCRIPTION: The TP2314A is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications,With Emitter Grounded to Case. MAXIMUM RATINGS I 400 mA V 16 V PDISS 5.0 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC qq JC 35 OC/W PACKAGE STYLE TO-39 (CE) 1 = COLLECTOR 2 = BASE 3 = EMITTER