TP2314 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 18 V BVCES IC = 5.0 mA 36 V BVCBO IC = 5.0 mA 36 V ICBO VCB = 15 V 250 mm A BVEBO IE = 1.0 mA 4.0 V hFE VCE = 5.0 V I C = 250 mA 5.0 --- Cob VCB = 15 V f = 1.0 MHz 20 pF GPE hh VCC = 12.5 V Pout = 40 W f = 175 MHz 0.1 W NPN SILICON HIGH FREQUENCY TRANSISTOR TP2314 DESCRIPTION: The TP2314 is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications, With Emitter Grounded to Case. MAXIMUM RATINGS I 1.0 A V 18 V PDISS 8.0 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC qq JC 22 OC/W PACKAGE STYLE TO-39 (CE) 1 = COLLECTOR 2 = BASE 3 = EMITTER