TM861S-L

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◆ Repetitive Peak Off-State Voltage : 800V ◆ R.M.S On-State Current ( IT(RMS)=8 A ) ◆ High Commutation dv/dt General Description This device is fully isolated p ackage suitable for AC switching app lication, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. TO-220F copyright @ Apollo Electron Co., Ltd. All rights reserved. 2.T2 3.Gate 1.T1 Symbol This device may substitute for BTA08-600, BTB08-600, BT137-600, BCR8PM-12 , TM861M/S-L series.

Electrical Characteristics (Tj=25 °C unless otherwise specified) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave Tj = 125 °C ──2 mA VTM Peak On-State Voltage ITM = 11 A, TP=380㎲ --- ─ 1.55 V GT1 Ⅰ Gate Trigger Current VD = 12 V, RL=30 Ω ── 30 mAI - GT1 Ⅱ ── 30 I - GT3 Ⅲ ── 30 GT1 Ⅰ Gate Trigger Voltage VD =12 V, RL=30 Ω ── 1.5 VV- GT1 Ⅱ ── 1.5 GT3 Ⅲ ── 1.5 VGD Non-Trigger Gate Voltage Tj= 125 °C, VD = VDRM, RL=3.3K Ω 0.2 --- ─ V dv/dt Critical Rate of Rise Off-State Voltage Tj = 125 °C, VD=2/3 VDRM 200 -- -- V/㎲ IH Holding Current IT=0.2A -- -- 50 mA TF8A80

-50 0 50 100 150 0.1 V GT1 V GT1 V GT3 VGT (t o VGT (25 o Junction Temperature [ o 100 60Hz 50Hz Surge On-State Current [A] Time (cycles) 0123456789 1 0 100 110 120 130 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] 0123456789 1 0 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] TJ = 125 o C TJ = 25 o C On-State Current [A] On-State Voltage [V] Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle VGD (0.2V) IGM (2A) 25 ℃ PG(AV) (1W) PGM (5W) VGM (10V) Gate Voltage [V] Gate Current [mA]

-50 0 50 100 150 0.1 I GT3 I GT1 I GT1 IGT (t o IGT (25 o Junction Temperature [ o 0.1 Transient Thermal Impedance [ o C/W] Time (sec) Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature

B 15.30 15.50 15. 70 38. 86 39.37 39. 88 C 2.95 3. 00 3.0 5 7. 49 7.6 2 7.75 D 10.30 10.50 10.7 0 26. 16 2 6.67 27 .18 E 0.95 1.08 1.2 0 2. 41 2.7 4 3.05 F 1.81 G 0.50 0 .70 0.9 0 1. 27 1.7 8 2.29 H 3.00 3 .20 3.4 0 7 .62 8.1 3 8.64 I 4.35 4.45 4. 55 11.05 11.30 11.56 J 6.20 K 0.41 L 2.30 2. 50 2.7 0 5.84 6.3 5 6.86 M 2.53 2 .73 2. 93 6. 43 6.9 3 7.44 N 2.34 2.54 2. 74 5. 94 6. 45 6.96

Dim. mm Inch A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 8.4 8.66 0.331 0.341 E 6.05 6.15 0.238 0.242 F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084 I 2.57 2.83 0.101 0.111 J2 .54 0 .100 K5 .08 0 .200 L 2.51 2.62 0.099 0.103 M 1.23 1.36 0.048 0.054 N 0.45 0.63 0.018 0.025 O 0.65 0.78 0.0025 0.031 P 5.0 0.197 φ 3.7 0.146 φ 1 3.2 0.126 φ 2 1.5 0.059 1. T1 2. T2 3. Gate A B C I G L 1 M EF φ 1 H K N O J D φ 2 φ P TF8A80