TM400DZ-24 POWEREX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
.110 TAB (4 TYP.) R - DIA. (3 TYP.) Q - THD (4 TYP.) K2A1 G1K1 A2K1 P P FD HG HK A BB KJGJM C E H N L (TYP.) K2A1 K1 Dimension Inches Millimeters A 7.09 180.0 C 2.36 60.0 D 1.97 Max. 50.0 Max. E 1.97 50.0 F 1.87 Max. 47.5 Max. G 1.73 44.0 H 1.42 36.0 J 1.38 35.0 K 1.02 26.0 L 0.94 24.0 M 0.90 23.0 N 0.63 16.0 P 0.35 9.0 Q M8 Metric M8 R 0.26 Dia. Dia. 6.5 *AIK2-AIK2 Connection made by external shorting bar. Description: Powerex Dual SCR POW-R-BLOK™ Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on common heatsinks. Features: M Isolated Mounting M Low Thermal Impedance Applications: M AC and DC Motor Control M Lighting Control M Electric Furnace Temperature Control M Contactless Switches Ordering Information: Select the complete eight digit module part number you desire from the table below. Example: TM400DZ-24 is a
1200 Volt, 400 Ampere Dual SCR
Module. Current Rating Voltage Type Amperes (x10) Volts TM 40 1200 (24) S-49 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual SCR Module
400 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TM400DZ-24 Dual SCR Module Characteristics Symbol TM400DZ-24 Units Peak Forward Blocking Voltage V DRM 1200 Volts Transient Peak Forward Blocking Voltage (Non-Repetitive), t < 5ms VDSM 1350 Volts DC Forward Blocking Voltage V D(DC) 960 Volts Peak Reverse Blocking Voltage V RRM 1200 Volts Transient Peak Reverse Blocking Voltage (Non-Repetitive), t < 5ms VRSM 1350 Volts DC Reverse Blocking Voltage V R(DC) 960 Volts RMS On-State Current I T(RMS) 620 Amperes Average On-State Current, TC = 66°C I T(AV) 400 Amperes Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz) ITSM 8000 Amperes I2t (for Fusing), 8.3 milliseconds I 2t 270000 A 2sec Critical Rate-of-Rise of On-State Current di/dt 200 Amperes/ ms Peak Gate Power Dissipation P GM 10 Watts Average Gate Power Dissipation P G(AV) 3 Watts Peak Forward Gate Voltage V GFM 10 Volts Peak Reverse Gate Voltage V GRM 5 Volts Peak Forward Gate Current I GFM 4 Amperes Storage Temperature T STG -40 to 125 °C Junction Temperature T j -40 to 125 °C Maximum Mounting Torque M6 Mounting Screw — 26 in.-lb. Maximum Mounting Torque M8 Terminal Screw — 95 in.-lb. Module Weight (Typical) — 1100 Grams V Isolation V RMS 2500 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TM400DZ-24 Dual SCR Module Electrical and Thermal Characteristics,Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units Blocking State Maximums Forward Leakage Current, Peak I DRM Tj= 125°C, VDRM = Rated — 60 mA Reverse Leakage Current, Peak I RRM Tj= 125°C, VRRM = Rated — 60 mA Conducting State Maximums Peak On-State Voltage V TM Tj= 125°C, ITM = 1200A — 1.4 Volts Switching Minimums Critical Rate-of-Rise of Off-State Voltage dv/dt T j= 125°C, VD = 2/3 VDRM 500 — Volts/ ms Thermal Maximums Thermal Resistance, Junction-to-Case R u(J-C) Per Module — 0.1 °C/Watt Thermal Resistance, Case-to-Fin R u(C-F) Per Module — 0.05 °C/Watt Thermal Resistance, Terminal-to-Case — Per Module 10 — m Ω Gate Parameters Maximums Gate Current-to-Trigger I GT VD = 6V, RL = 2Ω 15 100 mA Gate Voltage-to-Trigger V GT VD = 6V, RL = 2Ω — 3.0 Volts Non-Triggering Gate Voltage V GDM Tj= 125°C, VD = 1/2 VDRM 0.25 — Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TM400DZ-24 Dual SCR Module ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE, HALF-WAVE) AVERAGE ON-STATE CURRENT (AMPERES) CASE TEMPERATURE ( oC) 360o u RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 200 300 400 100 125 150 u = 30o 120o 180o60o 90o ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AVERAGE ON-STATE CURRENT (AMPERES) CASE TEMPERATURE ( oC) 100 125 150 360o u RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 200 300 400 500 600 700 120o 180o 90o 60o 270o DC u = 30o ON-STATE VOLTAGE (VOLTS) MAXIMUM ON-STATE CHARACTERISTICS 101 0.8 Tj = 125oC ON-STATE CURRENT (AMPERES) 104 103 102 1.2 1.6 2.0 2.4 CYCLES AT 60 H Z SURGE ON-STATE CURRENT (AMPERES) RATED SURGE ON-STATE CURRENT 101 102100 10000 8000 6000 4000 2000 GATE CURRENT (mA) GATE CHARACTERISTICS 101 102 103 104 GATE VOLTAGE (VOLTS) 10-1 100 101 102 IGFM = 4.0A PGM = 10W VGDM = 0.25V VGFM = 10V IGT = 100mA Tj = 25oC PG(AV) = 3.0W VGT = 3.0V MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE, HALF WAVE) AVERAGE ON-STATE CURRENT (AMPERES) ON-STATE POWER DISSIPATION (WATTS)RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 200 300 400 360o u 100 200 300 400 500 600 120o 180ou = 30o 60o 90o MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVEFORM) AVERAGE ON-STATE CURRENT (AMPERES) ON-STATE POWER DISSIPATION (WATTS) 360o u RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 200 400 600 800 100 200 300 400 500 600 700 120o 180o 270o u = 30o 60o 90o DC TIME (SECONDS) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION-TO-CASE) 10-3 THERMAL IMPEDANCE, Z u(J-C), (oC/W) R th(J-C) = 0.1oC/W 10-2 10-1 100 101 0.02 0.04 0.06 0.08 0.10 0.12 Tentative