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◆ Repetitive Peakk Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 16 A ) ◆ High Commutation dv/dt General Description This device is fully isolated p ackage suitable for AC sw itching application, phase control application such as IDQ speed and temperature modulation cont rol, industrial and domestic lighting control and static switching relay. IT(RMS) = 16 A ITSM = 168A VDRM = 600V TO-220F copyright @ Apollo Electron Co., Ltd. All rights reserved. 2.T2 3.Gate 1.T1 Symbol This device may substitute for BTA16-600, BTB16-600, BT139-600, BCR16PM-12, TM1661M/S-L series.
Electrical Characteristics(Tj=25 °C unless otherwise specified) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave VTM Peak On-State Voltage ITM = 22.5 A, tp=380㎲ ─ __ 1.55 V V GT1 Ⅰ Gate Trigger Current VD = 12 V, RL=30 Ω ── 30 mAI - GT1 Ⅱ ── 30 I - GT3 Ⅲ ── 30 GT1 Ⅰ Gate Trigger Voltage VD = 12 V, RL=30 Ω ── 1.5 VV- GT1 Ⅱ ── 1.5 GT3 Ⅲ ── 1.5 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD=VDRM, RL=3.3kΩ 0.2 ---- ----- V dv/dt Critical Rate of Rise Off-State Voltage TJ = 125 °C, IH Holding Current IT=0.2A --- --- 50 mA TF16A60
-50 0 50 100 150 0.1 V GT1 V GT1 VGT (t o C) V GT3 VGT (25 o Junction Temperature [ o 100 150 200 60Hz 50Hz Surge On-State Current [A] Time (cycles) 0 2 4 6 8 10 12 14 16 18 20 100 110 120 130 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] 0 2 4 6 8 10 12 14 16 18 20 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] TJ = 125 o C TJ = 25 o C On-State Current [A] On-State Voltage [V] Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle VGD (0.2V) IGM (2A) 25 ℃ PG(AV) (1W) PGM (5W) VGM (10V) Gate Voltage [V] Gate Current [mA]
-50 0 50 100 150 0.1 I GT1 I GT3 I GT1 IGT (t o IGT (25 o Junction Temperature [ o 0.1 Transient Thermal Impedance [ o C/W] Time (sec) Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature
- 11 B 15.30 15.50 15. 70 38. 86 39.37 39. 88 C 2.95 3. 00 3.0 5 7 .49 7.6 2 7.75 D 10 27. 18 E 0.95 1.08 1.2 0 2. 41 2. 74 3.05 F 67 4.7 5 G 2.2 9 H 8.6 4 I 4.35 4. 45 4.5 5 11.05 1 1.30 11 .56 J 6.20 6. 40 6.6 0 15.75 16.26 16.76 K 0.41 0. 51 0.6 1 1. 03 1.2 8 1. 35 6.86 M N 2.34
Dim. mm Inch A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 8.4 8.66 0.331 0.341 E 6.05 6.15 0.238 0.242 F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084 I 2.57 2.83 0.101 0.111 J2 .54 0 .100 K5 .08 0 .200 L 2.51 2.62 0.099 0.103 M 1.23 1.36 0.048 0.054 N 0.45 0.63 0.018 0.025 O 0.65 0.78 0.0025 0.031 P 5.0 0.197 φ 3.7 0.146 φ 1 3.2 0.126 φ 2 1.5 0.059 1. T1 2. T2 3. Gate A B C I G L 1 M EF φ 1 H K N O J D φ 2 φ P TF16A60