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◆ Repetitive Peak Off-State Voltage : 800V ◆ R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt General Description This device is suitable for low po wer AC switching applicat ion, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay where high sensi- tivity is required in all four quadrants. rrent ( IT(RMS)= 1 A ) This device may substitute for BTA12-600, BTB12-600, BT138-600, BCR12CM12L, TM1261M/S series.

Electrical Characteristics (Tj=25 °C unless otherwise specified) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave VTM Peak On-State Voltage ITM = 17 A, tp=380㎲ --- --- 1.55 V GT1 Ⅰ Gate Trigger Current VD = 12V, RL=30 Ω ── 30 mAI - GT1 Ⅱ ── 30 I - GT3 Ⅲ ── 30 GT1 Ⅰ Gate Trigger Voltage VD = 12 V, RL=30 Ω ── 1.5 VV- GT1 Ⅱ ── 1.5 GT3 Ⅲ ── 1.5 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = VDRM RL=3.3kΩ 0.2 ─- V dv/dt Critical Rate of Rise Off-State Voltage TJ = 125 °C VD=2/3 VDRM 200 ── V/㎲ IH Holding Current IT=0.2A ─ -- 50 mA TF12A80

-50 0 50 100 150 0.1 V GT1 V GT1 VGT (t o C) V GT3 VGT (25 o Junction Temperature [ o 100 150 200 60Hz 50Hz Surge On-State Current [A] Time (cycles) 0 2 4 6 8 10 12 14 100 110 120 130 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] 02468 1 0 1 2 1 4 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] TJ = 125 o C TJ = 25 o C On-State Current [A] On-State Voltage [V] Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle VGD (0.2V) IGM (2A) 25 ℃ PG(AV) (1W) PGM (5W) VGM (10V) Gate Voltage [V] Gate Current [mA]

-50 0 50 100 150 0.1 I GT3 I GT1 I GT1 IGT (t o IGT (25 o Junction Temperature [ o 0.1 Transient Thermal Impedance [ o C/W] Time (sec) Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature

B 15.30 15.50 15. 70 38. 86 39.37 39. 88 27. 18 3.05 4.75 G 0.50 0. 70 0.9 0 1. 27 1.7 8 2.29 H 3.00 3. 20 3.4 0 7. 62 8.1 3 8.6 4 I 4.35 4. 45 4.5 5 1 1.05 1 1.30 1 1. 16.76 K 0.41 0 .51 0.6 1 1. 03 1.2 8 1.54 L 2.30 2. 50 2.7 0 5.84 6.3 5 6.8 6 M 2. 53 2 .73 2.9 3 6 .43 6.9 3 7.44 N 2.34 2

Dim. mm Inch A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 8.4 8.66 0.331 0.341 E 6.05 6.15 0.238 0.242 F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084 I 2.57 2.83 0.101 0.111 J2 .54 0 .100 K5 .08 0 .200 L 2.51 2.62 0.099 0.103 M 1.23 1.36 0.048 0.054 N 0.45 0.63 0.018 0.025 O 0.65 0.78 0.0025 0.031 P 5.0 0.197 φ 3.7 0.146 φ 1 3.2 0.126 φ 2 1.5 0.059 1. T1 2. T2 3. Gate A B C I G L 1 M EF φ 1 H K N O J D φ 2 φ P TF12A80