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◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 6 A ) ◆ High Commutation dv/dt General Description This device is fully isolated p ackage suitable for AC switching app lication, phase control application such as fan speed and temperature modu lation control, lighting control and static switching relay. IT(RMS) = 6 A ITSM = 63A VDRM = 600V TO-220F copyright @ Apollo Electron Co., Ltd. All rights reserved. 2.T2 3.Gate 1.T1 Symbol This device may substitute for BTA06-600, BTB06-600, BCR5AM, BCR5PM-12L, TM561 S-L series.
Electrical Characteristics(Tj=25 °C unless otherwise specified) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave VTM Peak On-State Voltage ITM = 8.5A, tp=380㎲ ── 1.55 V GT1 Ⅰ Gate Trigger Current VD =12 V, RL=30 Ω ── 25 mAI - GT1 Ⅱ ── 25 I - GT3 Ⅲ ── 25 GT1 Ⅰ Gate Trigger Voltage VD = 12 V, RL=30 Ω ── 1.5 VV- GT1 Ⅱ ── 1.5 GT3 Ⅲ ── 1.5 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD =VDRM, RL=3.3kΩ 0.2 V dv/dt Critical Rate of Rise Off-State Voltage TJ = 125 °C, VD=2/3 VDRM 200 V/㎲ IH Holding Current IT=0.2A 35 mA TF6A60
θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] 012345678 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] -50 0 50 100 150 0.1 V GT1 V GT1 VGT (t o V GT3 VGT (25 o Junction Temperature [ o TJ = 25 o C TJ = 125 o C On-State Current [A] On-State Voltage [V] 60Hz 50Hz Surge On-State Current [A] Time (cycles) Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle VGD (0.2V) IGM (2A) 25 ℃ PG(AV) (1W) PGM (5W) VGM (10V) Gate Voltage [V] Gate Current [mA]
-50 0 50 100 150 0.1 I GT3 I GT1 I GT1 IGT (t o IGT (25 o Junction Temperature [ o Transient Thermal Impedance [ o C/W] Time (sec) Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature
A 9.88 10.08 10.2 8 25 .10 25.60 26. 11 B 15.30 15.50 15.70 38 .86 39.37 39. 88 C 2.95 3. 00 3.0 5 7. 49 7.6 2 7.75 D 10.30 1 0.50 10.70 26. 16 26.67 27. 18 E 0.95 1. 08 1.2 0 2. 41 2.7 4 3.05 F 1.81 1 .84 1.8 7 4. 60 4.6 7 4.75 G 0.50 0. 70 0.9 0 1. 27 1.7 8 2.29 H 3.00 3. 20 3.4 0 7. 62 8.1 3 8.64 I 4.35 4. 45 4.5 5 11.05 11.30 1 1.56 J 6. 20 6. 40 6.6 0 15.75 16.26 16.76 K 0. L 2. 30 2 M 2.53 2.73 2.93 6 .43 6.9 3 7.44 N 2.34 2 .54 2. 74 5. 94 6.4 5 6.96
Dim. mm Inch A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 8.4 8.66 0.331 0.341 E 6.05 6.15 0.238 0.242 F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084 I 2.57 2.83 0.101 0.111 J2 .54 0 .100 K5 .08 0 .200 L 2.51 2.62 0.099 0.103 M 1.23 1.36 0.048 0.054 N 0.45 0.63 0.018 0.025 O 0.65 0.78 0.0025 0.031 P 5.0 0.197 φ 3.7 0.146 φ 1 3.2 0.126 φ 2 1.5 0.059 1. T1 2. T2 3. Gate A B C I G L 1 M EF φ 1 H K N O J D φ 2 φ P TF6A60