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High Gain RF Amplifier, 75 Ω, 50-1200 MHz Data Sheet: Rev A 05-15-11 - 1 of 7 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®

Applications

  • Distribution Amplifiers
  • Multi Dwelling Units
  • Drop Amplifiers
  • Single Ended Gain Blocks Product Features Functional Block Diagram
  • 50-1200 MHz Bandwidth
  • High Gain : 18.5 dB
  • +38 dBm typical OIP3
  • 2.5 dB typical NF
  • Low Distortion : CSO -70dBc, CTB -88dBc tested at 10dBmV/ch at input, 80 ch NTSC
  • pHEMT Device Technology
  • SOT-89 Package
  • Single +8V Supply General Description Pin Configuration The TAT7427B is a high gain 75 Ω RF Amplifier designed for CATV applications from 50 to 1000 MHz (with operation up to 1.25GHz). The balance of low noise and distortion provides an ideal solution for drop and distribution amplifiers. It is particularly well suited for new home networ ks requiring higher gain for a large number of splits. The TAT7427B is fabricated using 6- inch GaAs pHEMT technology to optimize performance and cost. It provides excellent gain and return loss consistency inherent to the pHEMT process. Pin # Symbol

1 RF_ Input

2, 4 Ground

3 RF_Output / Vdd

Ordering Information

Part No. Description TAT7427B-T1 High Gain 75 Ω RF Amplifier (Lead free / RoHS compliant SOT-89 Pkg) TAT7427B-T1-EB Drop Amplifier Evaluation Board Standard T/R size = 1000 pieces on a 7” reel.

High Gain RF Amplifier, 75 Ω, 50-1200 MHz Data Sheet: Rev A 05-15-11 - 2 of 7 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Specifications Absolute Maximum Ratings Parameter Rating Storage Temperature -55 to 150 oC Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units Vdd 8 V Operating Case Temperature -20 85 oC Tj (For >106 MTTF) 150 oC Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions: Case Temperature 25ºC Parameter Conditions Min Typical Max Units Operational Frequency Range 50 1002 MHz Gain 18.5 dB Gain Flatness ±0.3 dB Noise Figure 2.5 dB Input Return Loss 23 dB Output Return Loss 20 dB CSO 10 dBmV/ch at input, 80 ch NTSC flat -70 dBc CTB 10 dBmV/ch at input, 80 ch NTSC flat -88 dBc Output IP2 See Note 1. 61 dBm Output IP3 See Note 1. 38 dBm Supply Voltage, Vcc +8 V Device Voltage +6 V Supply Current, Idd See Note 2. 145 175 mA Thermal Resistance (θjc) 36 oC/W Notes: 1. OIP3 and OIP2 tested with two tones at 225 MHz and 325 MHz. Measured at 10 dBm/tone output power. 2. Voltage at the device is 6V.

High Gain RF Amplifier, 75 Ω, 50-1200 MHz Data Sheet: Rev A 05-15-11 - 3 of 7 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Typical Performance Data Note: Temperature indicated in plots below is Case Temperature. 50 250 450 650 850 1050 1250 Gain (dB) Frequency (MHz) Gain vs. Frequency -40C 25C 85C 50 250 450 650 850 1050 1250 Input Return Loss (dB) Frequency (MHz) Input Return Loss vs. Frequency -40C 25C 85C 50 250 450 650 850 1050 1250 Output Return Loss (dB) Frequency (MHz) Output Return Loss vs. Frequency -40C 25C 85C -80 -75 -70 -65 -60 -55 -50 0 100 200 300 400 500 600 CSO (dBc) Frequency (MHz) CSO vs. Frequency 10 dBmV/ch at input, 80 ch NTSC flat -40C 25C 85C -90 -85 -80 -75 -70 -65 -60 0 100 200 300 400 500 600 CTB (dBc) Frequency (MHz) CTB vs. Frequency 10 dBmV/ch at input, 80 ch NTSC flat -40C 25C 85C

High Gain RF Amplifier, 75 Ω, 50-1200 MHz Data Sheet: Rev A 05-15-11 - 4 of 7 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Pin Description Pin Symbol Description

1 RF_IN RF Input , DC voltage present, blocking capacitor required

2 GND Ground

3 RF_OUT RF Output , DC voltage present, blocking capacitor required

Backside Paddle GND Multiple vias should be employed to minimize inductance and thermal resistance Applications Information PC Board Layout Core is 0.062”, FR4, єr = 4.7. Metal layers are 1-oz copper. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended.

High Gain RF Amplifier, 75 Ω, 50-1200 MHz Data Sheet: Rev A 05-15-11 - 5 of 7 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Applications Information PC Board Schematic Bill of Material Reference Desg. Value Description Manufacturer Part Number U1 RF Amplifier, 75 ohm , 50-1000MHz TriQuint TAT7427B C1, C4, C5 0.01 uF Cap, Chip, 0603, 10%, 50V, X7R various C2 680 pF Cap, Chip, 0402, 50V, 5%, COG various C3 120 pF Cap, Chip, 0402, 50V, 5%, COG various L1 880 nH Coil, Wire Wound, 1206, ±10% various L2 3.9 nH Inductor, Chip, 0603, 5% various L3 5.6 nH Inductor, Chip, 0603, 5% various L4 500 nH Coil, Wire Wound, 1206, ±10% various R1, R2 16 Ω Resistor, Chip, 1206, ±5%, 1/4W various

High Gain RF Amplifier, 75 Ω, 50-1200 MHz Data Sheet: Rev A 05-15-11 - 6 of 7 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Mechanical Information Package Information and Dimensions This p ackage is lead -free, RoHS-compliant, and green. The plating material on the pins is 100% matte tin. It is compatible wi th both lead- free (maximum 260 ° C reflow temperature) and leaded (maximum 245 ° C reflow temperature) soldering processes. The TAT7427B will be marked with a “TAT7427B” designator and an 8 digit alphanumeric lot code (XXXXYYWW). The first 4 digits (XXXX) are the lot code. The last 4 digits (YYWW) are the date code consisting of the year and work week of assembly. Mounting Configuration All dimensions are in millimeters (inches). Angles are in degrees. Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diamete r drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.

High Gain RF Amplifier, 75 Ω, 50-1200 MHz Data Sheet: Rev A 05-15-11 - 7 of 7 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Product Compliance Information ESD Information ESD Rating: Class 1B Value: Passes ≥ 500V min. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: Passes ≥ 2000 V Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 Solderability Compatible with the latest version of J -STD-020, Lead free solder, 260° This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

  • Lead Free
  • Halogen Free (Chlorine, Bromine)
  • Antimony Free
  • TBBP-A (C15H12Br402) Free
  • PFOS Free
  • SVHC Free MSL Rating MSL 3 at +260 °C convection reflow The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Email: info-sales@tqs.com Fax: +1.707.526.1485 For technical questions and application information: Email: sjcapplications.engineering@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever fo r the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any pa rty any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or autho rized for use as critical components in medical, life -saving, or life -sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.