TAT2814A1L-EB

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 12

Technical content

DOCSIS 3.0 / Edge QAM Variable Gain Amplifier 48-pin 7x7mm leadless SMT Package

Applications

• Integrated DOCSIS 3.0 / Edge QAM Amplifier Chain
• Forward Path Variable Gain Amplifier Functional Block Diagram

Ordering Information

Part No. Description TAT2814A1L DOCSIS 3.0 Edge QAM Variable Gain Amplifier TAT2814A1L-EB Evaluation Board Standard T / R size = 1000 pieces on a 7” reel Product Features

• Meets DOCSIS 3.0 W ith +4 dB Typical Performance Margin
• < 5 Watt Nominal Power Consumption
• 45 – 1003 MHz Bandwidth
• Low-Reflection Differential Input / Output Stages
• 18 dB Typical Return Loss Across Gain Range
• Variable Gain Attenuator: 18 dB Typical Range
• 30 dB Typical Max Gain
• +49 dBm Typical OIP3
• 2.7 dB Typical Noise Figure
• Typical Input Stage Bias: +5 V, 290 mA
• Typical Output Stage Bias: +8 V, 415 mA General Description The TAT2814A 1L is an RFIC for DOCSIS 3.0 Output Sections, such as CMTS and Edge QAM. It combines a low-reflection differential input stage, a variable gain attenuator and an eff icient output amplifier to provide significant reduction in power consumption and PC board space. It replaces circuitry requiring up to 10x the board space and 2x the power. The TAT2814A 1L meets the stringent DOCSIS 3.0 output linearity specifications wit h extra margin to overcome additional losses before the output connector. The TAT2814A 1L is packaged in an industry standard 7 x 7 mm 48- pin leadless SMT package and consumes

5 W between a + 5 V input amplifier supply and an +8 V

output amplifier supply. The TAT2814A1L utilizes proven GaAs pHEMT to optimize performance and cost. It allows the designer to optimize output stage vol tage to significantly reduce power consumption in Edge QAM applications. Datasheet: Rev. H 11-12-14 - 1 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

DOCSIS 3.0 / Edge QAM Variable Gain Amplifier Recommended Operating Conditions Parameter Min Typ Max Units VDD - Stage 1 +5 V VPA - Stage 2 +8 V Operating Ambient Temp. −40 +85 °C Tj (for >106 hours MTTF) 150 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Absolute Maximum Ratings Parameter Rating Storage Temperature −40 to +100 °C Device Voltage (VDD) +10 V RF Input Power (single tone) +10 dBm Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: VDD = +5 V, VPA = +8 V, TAMBIENT = +25 °C, Includes input and output balun losses Parameter Conditions Min Typ Max Units Operational Frequency Range 45 1003 MHz Gain IAGC= 1 mA, f= 1003 MHz 27.5 30 32 dB Gain Variation over Temp (1) Maximum gain deviation within passband within temp. range of −40 °C to +85 °C relative to +25 °C. 1.0 dB Gain Flatness Peak deviation from straight line across full band. ±0.25 ±0.5 dB Gain Slope Max slope of best fit straight line over all attenuator settings −1.4 −1.0 dB Attenuator Range Max Gain - Min Gain 18 dB Input Return Loss IAGC= 1 mA 18 dB Output Return Loss IAGC= 1 mA 20 dB EQAM VOUT Four Channel ACPR on a Single Port Adjacent (1, 2) +55 +56 dBmV / chan. Next-adjacent channel (1, 3) Third-adjacent channel (1, 4) EQAM Vout (1, 5) Single Channel Harmonics +63 +64 dBmV Output P1dB +28 dBm Output IP3 Pout=+8 dBm/tone, 6 MHz tone spacing +49 dBm Noise Figure 2.7 dB 1st Stage Current VDD=+5 V 290 330 mA 2nd Stage Current VPA=+5 V 415 450 mA Power Down DC Control Pin 12) Input High Voltage 1.8 V Input Low Voltage 0.5 Input High Current 300 uA Input Low Current −-50 AGC Input Current (Pin 14) −40 −1 mA Thermal Resistance, θjc (6) 11.8 °C/W Notes: 1. Production tested at 66 and 990 MHz. 2. Adjacent channel (750 kHz from channel block edge to 6 MHz from channel block edge) better than −60 dBc. 3. Next-adjacent channel (6 MHz from channel block edge to 12 MHz from channel block edge) better than −63 dBc. 4. Third-adjacent channel (12 MHz from channel block edge to 18 MHz from channel block edge) better than −65 dBc. 5. In each of 2N contiguous 6 MHz channels or in each of 3N contiguous 6 MHz channels coinciding with 2nd harmonic and with 3rd harmonic components, respectively (up to 1002 MHz) better than −63 dBc.. 6. ϴjb = (Tjmax - Tgroundslug)/Pdiss , where Pdiss = power dissipated in the 2nd stage amplifier (power amplifier) Datasheet: Rev. H 11-12-14 - 2 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

DOCSIS 3.0 / Edge QAM Variable Gain Amplifier TAT2814A1L-EB Schematic 13 14 15 16 17 18 19 20 21 22 23 24 373839404142434445464748 SUBCKT SUBCKT 3 4 SUBCKT ID=U5 NE T="MB T3904" SUBCKT RF I NPUT C15 U3 C1 C10 C35 R34 R31 R13 U5 R29 L6 C26 R11 R2L12L14 R12 C19 R16 C16 C20 C21 C13 VAGC VPRE PD1 VPRE TAT2814 VPA PD1 VAGC C41 L18 C35 R24 C7 C8L15 C22 L17 VPA GND VAGC PD1 VPRE VPRE R35 Note: R3 and R4 required for matching and stability of input amplifie C Datasheet: Rev. H 11-12-14 - 3 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

DOCSIS 3.0 / Edge QAM Variable Gain Amplifier Bill of Material – TAT2814A1L-EB Reference Des. Value Description Manuf. Part Number U1 Variable Gain Amplifier, QFN 7 x 7 TriQuint TAT2814A C1, C2, C20, C21 0.01 μF Ceramic Cap, 0402, X7R, 16 V, 10% Various C3, C4, C19, C26, C35 1000 pF Ceramic Cap, 0402, 5% Various C7, C8, C22, C23, C35, C41 0.01 μF Ceramic Cap, 0603, X7R, 50 V,5% Various C9, C10, C13, C14, C15, C16, C17, C36, R7, R10 DNP No Load Parts L1 1.8 nH Ind, wirewound, 0402, 5% Various L16, R2, R13 0 Ω Res, thin film, 0402 Various L5 420 nH Ind, wirewound, 0402, 5% Coilcraft 0402AF-421XJLU L6, L7 560 nH Ind, wirewound, 0603, 5% Coilcraft 0603AF-561XJRU L12, L14 500 nH Ind, wirewound, 1206, 5% Murata LQH31HNR50K L15, L17, L18 0.9 μH Ind, Ferrite, 1008, 10% Various R1 1.8 Ω Res, thin film, 0805, 1/4 W 5% Various R3, R4 2.5 kΩ Res, thin film, 0402, 5% Various R11 560 Ω Res, thin film, 0402, 5% Various R12 1 kΩ Thermistor, PTC, 0603, 5% Panasonic ERAV33J102V R16 680 Ω Res, thin film, 0402, 1% Various R29 36 Ω Res, thin film, 0402, 1% Various R31 1.0 Ω Res, thin film, 0402, 1% Various R34 1.27 kΩ Res, thin film, 0402, 5% Various R35 150 kΩ Thermistor, NTC, 0402, 5% Panasonic ERTJOEV154J U3, U4 1:1 Transformer, 50 – 1200 MHz M/A-COM MABA-009210- CT1760 U5 NPN Trans, dual NPN, SOT363 Various Datasheet: Rev. H 11-12-14 - 4 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

DOCSIS 3.0 / Edge QAM Variable Gain Amplifier Typical Performance – TAT2814A1L-EB 0 200 400 600 800 1000 Gain (dB) Frequency (MHz) Gain vs. Frequency +85°C +25°C −40°C 0 8 16 24 32 40 Gain (dB) AGC Current (mA) Gain vs. AGC Current Freq.=500 MHz Temp.=+25°C 0 200 400 600 800 1000 NF (dB) Frequency (MHz) Noise Figure vs. Frequency 36 mA 21 mA 11 mA 1 mA 0 200 400 600 800 1000 NF(dB) Frequency (MHz) Noise Figure vs. Frequency +85°C +25°C −40°C IAGC=1 mA -30 -25 -20 -15 -10 0 200 400 600 800 1000 |S11| , |S22| (dB) Frequency (MHz) Return Loss vs. Frequency Temp.=+25°C |S22| |S11| AGC Current=1 mA -100 -95 -90 -85 -80 -75 -70 -65 -60 -55 -50 100 300 500 700 900 1100 Harmonic (dBc) Frequency (MHz) Harmonics at Docsis +4 -40C +25C +85C 2x66MHz 3x66MHz 2x330MHz 3x330MHz Datasheet: Rev. H 11-12-14 - 5 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

DOCSIS 3.0 / Edge QAM Variable Gain Amplifier Typical Performance – TAT2814A1L-EB Measurements at 990 MHz taken using a high pass filter to minimize contributions from the source -70 -68 -66 -64 -62 -60 0 200 400 600 800 1000 ACPR2 (dBc) Frequency (MHz) ACPR2 over Temperature 4-ch Docsis+4, 750 kHz - 6 MHz +85°C +25°C −40°C -70 -68 -66 -64 -62 -60 0 200 400 600 800 1000 ACPR3 (dBc) Frequency (MHz) ACPR3 over Temperature 4-ch Docsis+4, 6 MHz - 12 MHz +85°C +25°C −40°C -74 -72 -70 -68 -66 -64 0 200 400 600 800 1000 ACPR4 (dBc) Frequency (MHz) ACPR4 over Temperature 4-ch Docsis+4, 12 MHz - 18 MHz +85°C +25°C −40°C Datasheet: Rev. H 11-12-14 - 6 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

DOCSIS 3.0 / Edge QAM Variable Gain Amplifier

1200 MHz Performance – TAT2814A1L-EB

0 200 400 600 800 1000 1200 Gain (dB) Frequency (MHz) Gain vs. Frequency Temp.=+25°C -30 -25 -20 -15 -10 0 200 400 600 800 1000 1200 |S11| (dB) Frequency (MHz) Input Return Loss vs. Frequency Temp.=+25°C -30 -25 -20 -15 -10 0 200 400 600 800 1000 1200 |S22| (dB) Frequency (MHz) Output Return Loss vs. Frequency Temp.=+25°C 0 200 400 600 800 1000 1200 NF (dB) Frequency (MHz) Noise Figure vs. Frequency Temp.=+25°CVAGC=+1.2 V AGC Current=1 mA Datasheet: Rev. H 11-12-14 - 7 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

DOCSIS 3.0 / Edge QAM Variable Gain Amplifier Detailed Device Description Balance The TAT2814A 1L is designed for excellent differential -mode performance throughout the chain. Unlike many commercially available push -pull amplifiers built with 2 discrete die, both stages of the TAT2814A 1L are single- chip designs utilizing a differential pair topology for best common-mode performance. Provision is made for using external bias inductors to increase tail impedances in the input differential pairs, improving further the signal balance and 2 nd order performance through the chain. The RF output of the first st age is connected internally to the differential attenuator and brought out to external pins for applying stage bias and enabling RF feedback to the input. The attenuator outputs are brought out to a single side of the TAT2814A 1L for customers desiring to perform inter-stage filtering or signal processing. The differential inputs to the output stage are located on an adjacent side of the die, spaced to minimize package coupling so as to not limit the performance of off -stage filtering. Input Matching The input stage uses external feedback to achieve 75 Ω differential input impedance. The bias current of the input stage may be adjusted with an external resistor to ground. Pre-Amp Powerdown The preamp stage of the TAT2814A1L can be powered down by setting PD pin to Logic LOW. VDD pins should be set to 5 V in both power-down and operating modes. Gain Adjustment A fully differential gain control function is implemented with a low distortion analog diode -based attenuator. The attenuator provides for monoton ic gain adjustment over a full 18 dB attenuation range. The excellent RF match characteristics ensure excellent gain flatness and return loss over the full attenuation range. Control is provided by a single current controlled line. Attenuation is monotonic and linear with control current. Output Stage A differential output stage has excellent output linearity performance at very low power. The differential outputs of the second stage may be combined with a commercially available balun to provide for sing le-ended drive signals. The bias current of the output stage may be placed in active bias control. This is implemented by sensing the voltage at pin 19 and providing a feedback voltage bias to pin 27. Please contact TriQuint for further details. Thermal Management Total maximum power consumption of the TAT2814A1L is 5.25 Watts. Care must be taken in the layout to provide adequate thermal path with multiple vias under the TAT2814A1L. A heat sink should also be used to carry heat away from the backside PCB. See section on Mechanical Information for recommended mounting pattern for the part. Technology The TAT2814A 1L utilizes proven pHEMT device technology that has yielded over 200 million RFICs to date. For detailed qualification and reliability report s on other products fabricated in this process, please consult TriQuint. Key RFICs that will be used in the TAT2814A 1L have already exceeded industry qualification requirements in other packages. Bias Current Set Bias current to each amplification stage is set by external circuitry to allow trade-off of power consumption and distortion performance. Separate Bias Voltage for each stage Preamplifier, interstage attenuator, and driver amplifier have independent voltage supply pins. Datasheet: Rev. H 11-12-14 - 8 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

DOCSIS 3.0 / Edge QAM Variable Gain Amplifier Pin Configuration and Description 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 NC RFIN1_P SRC1 SRC1 RFIN1_N NC NC NC RFOUT1_N NC NC PD NC AGC NC VDDATT VDDATT VG2_ADJ ID2_SENSE VPA RFOUT2_N GND GND RFOUT2_P VPA GND ID2_ADJ NC NC RFIN2_P NC RFIN2_N NC NC NC NC NC NC NC RFOUT_ATT_N RFOUT_ATT_P NC NC NC NC RFOUT1_P NC NC Pin No. Label Description 45, 47, 48 NC No Connect

2 RFIN1_P PreAmp RF Input, Positive

3, 4 SRC1 PreAmp RF Source

5 RFIN1_N PreAmp RF Input, Negative

9 RFOUT1_N PreAmp RF Output, Negative

12 PD Power Down Control

14 AGC Current Based Attenuator Control

16, 17 VDDATT Attenuator Bias

18 VG2_ADJ Power Amplifier VG2 Bias Adjust

19 ID2_SENSE Power Amplifier Current Sense

20, 25 VPA Power Amplifier Supply

21 RFOUT2_N Power Amplifier RF Output, Negative

22, 23, 26 GND Ground Pin

24 RFOUT2_P Power Amplifier RF Output, Positive

27 ID2_ADJ Power Amplifier Bias Current Adjust (Optional)

30 RFIN2_P Power Amplifier RF Input, Positive

32 RFIN2_N Power Amplifier RF Input, Negative

40 RFOUT_ATT_N Attenuator RF Output, Negative

41 RFOUT_ATT_P Attenuator RF Output, Positive

46 RFOUT1_P PreAmp RF Output, Positive

Backside Pad GND Backside Ground Slug Datasheet: Rev. H 11-12-14 - 9 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

DOCSIS 3.0 / Edge QAM Variable Gain Amplifier Package Marking and Dimensions This package is lead -free/RoHS-compliant. The plating material on the leads is 100 % Matte Tin. It is compatible with both lead -free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. The TAT2814A will be marked with a “TAT2814A” designator and an 8 digit alphanumeric lot code (YYWWCCCC). The first four digits are a date code consisting of the year and work week (YYWW) of assembly. The last four digits are the lot code (XXXX). Datasheet: Rev. H 11-12-14 - 10 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

DOCSIS 3.0 / Edge QAM Variable Gain Amplifier PCB Mounting Pattern Datasheet: Rev. H 11-12-14 - 11 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

DOCSIS 3.0 / Edge QAM Variable Gain Amplifier Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class 1A Value: ≥ 250 V to < 500 V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class C2 Value: ≥ 500 V to < 1000 V Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 Solderability Compatible with J -STD-020, Lead free solder, (260° maximum reflow temperature) and tin/lead (245°C maximum reflow temperature) soldering processes. Contact plating: NiPdAu RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free MSL Rating MSL Rating: Level 3 Test: 260°C convection reflow Standard: JEDEC Standard IPC/JEDEC J-STD-020 Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Email: info-sales@triquint.com Fax: +1.503.615.8902 For technical questions and application information: Email: sjcapplications.engineering@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the u ser. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information do es not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life- saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev. H 11-12-14 - 12 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com