TAK7 POWEREX | Alldatasheet
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR www.pwrx.com 1200 Amperes Average
4400 Volts
Revision Date: 03/26/2010 TAK7 1200A TAK7 120A (Outline Drawing) Ordering Information: Select the complete 12 digit module part number from the table below. Example: TAK7441202DH is a 4400V 1200A Phase Control SCR. Voltage Current Turn-off Time Gate Current Lead Type VRRM (Volts) IT(av) (A) tq (µsec) IGT (mA) Code TAK7 36 3600V 4000V 4400V 1200A 500 µsec (Typical) 300 mA DH 12” Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: Low On-State Voltage High di/dt Capability High dv/dt Capability Hermetic Packaging Excellent Surge and I 2t Ratings Applications: Power Supplies Battery Chargers Static VAR TAK7 1200A Phase Control SCR
1200 Amperes Average, 4400 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR www.pwrx.com 1200 Amperes Average Revision Date: 03/26/2010 TAK7 1200A Absolute Maximum Ratings Characteristics Symbol Units Non-Repetitive Transient Peak Reverse Blocking Voltage V RSM V RRM + 100V Volts RMS On-State Current, TC = 82°C IT(RMS) 1700 Amperes Average Current 180° Sine Wave, TC = 82°C I T(AV) 1200 Amperes RMS On-State Current, TC = 55°C I T(RMS) Amperes Average Current 180° Sine Wave, TC = 55°C I T(AV) 960 Amperes Peak One Cycle Surge On-State Current (Non-Repetitive) 60 Hz I TSM 40,000 Amperes Peak One Cycle Surge On-State Current (Non-Repetitive) 50 Hz I TSM 36,500 Amperes Critical Rate-of-rise of On-State Current (Non-Repetitive) di/dt 400 A/ μsec Critical Rate-of-rise of On-State Current (Repetitive) di/dt 150 A/ μsec I t (for Fusing) for One Cycle, 60 Hz I t 6.67 X 10 A sec Peak Gate Power Dissipation P GM 16 Watts Average Gate Power Dissipation P G(av) 3 Watts Operating Temperature TJ -40 to +125 °C Storage Temperature Tstg -40 to +150 °C Approximate Weight 2.2 lb 1000 g Mounting Force 9000 to 11000 lb. 4100 to 5000 kg. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR www.pwrx.com 1200 Amperes Average Revision Date: 03/26/2010 TAK7 1200A Thermal Characteristics Maximum Thermal Resistance, Double Sided Cooling Max. Units Junction-to-Case Case-to-Sink RΘ(J-C) RΘ(C-S) 0.015 0.007 °C/W °C/W Electrical Characteristics, TJ=25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Repetitive Peak Reverse Leakage Current I RRM T J=125°C, VR = VRRM 250 mA Repetitive Peak Forward Leakage Current I DRM T J=125°C, VD = VDRM 250 mA Peak On-State Voltage V TM T J=25°C, ITM=1500A peak, Duty Cycle < 0.1 % 1.90 V Threshold Voltage, Low-level Slope Resistance, Low-level V(TO)1 rT1 TJ = 125°C, ITM = 250A to 4000A 1.262 0.397 V mΩ Threshold Voltage, High-level Slope Resistance, High-level V(TO)2 rT2 TJ = 125°C, ITM ≥ 4000A 1.412 0.368 V mΩ VTM Coefficients TJ = 125°C VTM = A+ B Ln(I) +C(I) + D Sqrt(I) A = B = C = D = 2.53 -0.294
2.47 E-04
0.0284 Typical Delay Time t d ITM = 1000A, VD = 1500 V 4 µs Typical Turn-Off Time tq T j = 125°C, IT = 250A, diR/dt = 50A/µs Reapplied dv/dt = 20 V/µs Linear to 80% VDRM 500 µs Minimum Critical dv/dt – Exponential to VDRM dv/dt TJ = 125°C 1000 V/µs Gate Trigger Current I GT TJ = 25°C, VD = 12 V 300 mA Gate Trigger Voltage V GT TJ = 25°C, VD = 12 V 5.0 V Non-Triggering Gate Voltage V GDM TJ = 125°C, VD = VDRM 0.45 V Peak Forward Gate Current I GTM 4 A Peak Reverse Gate Voltage V GRM 5 V
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR www.pwrx.com 1200 Amperes Average Revision Date: 03/26/2010 TAK7 1200A 15° 30° 60° 90° 120° 180° 500 1000 1500 2000 2500 3000 3500 0 200 400 600 800 1000 1200 1400 Maximum Power Dissipation Per SCR - Watts Average On-State Current - It(av) - Amperes Maximum On-State Power Dissipation (Sinusoidal Waveform) 15° 30° 60° 90° 120° 180° 100 110 120 130 0 200 400 600 800 1000 1200 1400 Max. Case Temperature - Tcase - °C Average On-State Current - It(av) - Amperes Maximum Allowable Case Temperature (Sinusoidal Waveform) 15° 30° 60° 90° 120° 180° 270° 360° 500 1000 1500 2000 2500 3000 3500 4000 0 200 400 600 800 1000 1200 1400 1600 1800 2000 Maximum Power Dissipation Per SCR - Watts Average On-State Current - It(av) - Amperes Maximum On-State Power Dissipation (Rectangular Waveform) 15° 30° 60° 90° 120° 180° 270° 360° (DC) 100 110 120 130 0 200 400 600 800 1000 1200 1400 1600 1800 2000 Max. Case Temperature - Tcase - °C Average On-State Current - It(av) - Amperes Maximum Allowable Case Temperature (Rectangular Waveform) 10 100 1000 10000 On-State Voltage - Vtm - Volts Instantaneous On-State Current - Itm - Amperes Maximum On-State Forward Voltage Drop ( Tj = 125 °C ) 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.001 0.01 0.1 1 10 100 Thermal Impedance - Rjc - °C/W Time - t - Seconds Maximum Transient Thermal Impedance (Junction to Case)