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Technical content

Features

◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 8 A ) ◆ High Commutation dv/dt General Description This device is fully isolated pa ckage suitable for AC sw itching application, phase control application such as fan speed and temperat ure modu lation control, lighting control and static switching relay. IT(RMS) = 8 A ITSM = 65A VDRM = 600V TO- 252 copyright @ Apollo Electron Co., Ltd. All rights reserved. 2.T2 3.Gate 1.T1 Symbol

Electrical Characteristics

Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave Tj = 125 °C ──1 mA VTM Peak On-State Voltage ITM = 8 A, TP=380㎲ --- ─ 1.5 V GT1 Ⅰ Gate Trigger Current VD = 12 V, RL=100 Ω ── 30 mAI - GT1 Ⅱ ── 30 I - GT3 Ⅲ ── 30 GT1 Ⅰ Gate Trigger Voltage VD =12 V, RL=100 Ω ── 1.5 VV- GT1 Ⅱ ── 1.5 GT3 Ⅲ ── 1.5 VGD Non-Trigger Gate Voltage Tj= 125 °C, VD = VDRM, RL=3.3K Ω 0.2 --- ─ V dv/dt Critical Rate of Rise Off-State Voltage Tj = 125 °C, VD=2/3 VDRM 200 -- -- V/㎲ IH Holding Current VD=12V, IGT=50mA -- -- 50 mA TD8A60

-50 0 50 100 150 0.1 V GT1 V GT1 V GT3 VGT (t o VGT (25 o Junction Temperature [ o 100 60Hz 50Hz Surge On-State Current [A] Time (cycles) 0123456789 1 0 100 110 120 130 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] 0123456789 1 0 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] TJ = 125 o C TJ = 25 o C On-State Current [A] On-State Voltage [V] Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle VGD (0.2V) IGM (2A) 25 ℃ PG(AV) (1W) PGM (5W) VGM (10V) Gate Voltage [V] Gate Current [mA]

-50 0 50 100 150 0.1 I GT3 I GT1 I GT1 IGT (t o IGT (25 o Junction Temperature [ o 0.1 Transient Thermal Impedance [ o C/W] Time (sec) Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature