T2G6003028-FS

T2G6003028-FS_15 TRIQUINT | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 13

Technical content

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev - 04-30-13 - 1 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com

Applications

• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers Product Features
• Frequency: DC to 6 GHz
• Output Power (P 3dB ): 26 W at 5.6 GHz
• Linear Gain: >14 dB at 5.6 GHz
• Operating Voltage: 28 V
• Low thermal resistance package Functional Block Diagram Pin Configuration Pin No. Label

1 VD / RF OUT

2 VG / RF IN

The TriQuint T2G6003028-FS is a 30W (P 3dB ) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm process, which features advanced field plate techni ques to optimize power and efficiency at high drain bias operating conditions. This optimization can potenti ally lower system costs in terms of fewer amplifier line -ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request.

Ordering Information

T2G6003028-FS EAR99 Packaged part Flangeless T2G6003028-FS- EVB1 EAR99 5.4 – 5.9 GHz Evaluation Board T2G6003028-FS- EVB2 EAR99 1.3 – 1.9 GHz Evaluation Board

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev - 04-30-13 - 2 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Absolute Maximum Ratings Parameter Value Breakdown Voltage (BV DG ) 100 V Gate Voltage Range (V G) -7 to 0 V Drain Current (I D) 5.5 A Gate Current (I G) -10 to 28 mA Power Dissipation (P D) 47.5 W RF Input Power, CW, T = 25° C (P IN ) 40 dBm Channel Temperature (T CH ) 275 ° C Mounting Temperature (30 Seconds) 320 ° C Storage Temperature -40 to 150 ° C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage (V D) 28 V (Typ.) Drain Quiescent Current (I DQ ) 200 mA (Typ.) Peak Drain Current ( I D) 1.6 A (Typ.) Gate Voltage (V G) -3.0 V (Typ.) Channel Temperature (T CH ) 225 ° C (Max) Power Dissipation, CW (P D) 35 W (Max) Power Dissipation, Pulse (P D) 40 W (Max) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. RF Characterization – Load Pull Performance at 6.0 GHz (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 200 mA Symbol Parameter Min Typical Max Units GLIN Linear Gain TBD dB P3dB Output Power at 3 dB Gain Compression TBD W DE 3dB Drain Efficiency at 3 dB Gain Compression TBD % PAE 3dB Power-Added Efficiency at 3 dB Gain Compression TBD % G3dB Gain at 3 dB Compression TBD dB Notes: 1. VDS = 28 V, I DQ = 200 mA; Pulse: 100µs, 20% RF Characterization – Load Pull Performance at 3.0 GHz (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 200 mA Symbol Parameter Min Typical Max Units GLIN Linear Gain TBD dB P3dB Output Power at 3 dB Gain Compression TBD W DE 3dB Drain Efficiency at 3 dB Gain Compression TBD % PAE 3dB Power-Added Efficiency at 3 dB Gain Compression TBD % G3dB Gain at 3 dB Compression TBD dB Notes: 1. VDS = 28 V, I DQ = 200 mA; Pulse: 100µs, 20%

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev - 04-30-13 - 3 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com RF Characterization – Performance at 5.6 GHz (1, 2) Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 200 mA Symbol Parameter Min Typical Max Units GLIN Linear Gain 14.7 dB P3dB Output Power at 3 dB Gain Compression 26.5 W DE 3dB Drain Efficiency at 3 dB Gain Compression 58.0 % PAE 3dB Power-Added Efficiency at 3 dB Gain Compression 54.1 % G3dB Gain at 3 dB Compression 11.7 dB Notes: 1. Performance at 5.6 GHz in the 5.4 to 5.9 GHz Evaluation Board 2. VDS = 28 V, I DQ = 200 mA; Pulse: 100µs, 20% RF Characterization – Narrow Band Performance at 5. 6 GHz (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 200 mA Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness 10:1 Notes: 1. VDS = 28 V, I DQ = 200 mA, CW at P 1dB

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev - 04-30-13 - 4 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θJC ) DC at 85 ° C Case 4.0 ºC/W Channel Temperature (TCH ) 225 ° C Notes: Thermal resistance measured to bottom of package, CW. Median Lifetime Maximum Channel Temperature TBASE = 85° C, P D = 40 W

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev - 04-30-13 - 5 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits w hen placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedanc es presented to the device via an RF circuit or loa d-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. Test Conditions: V DS = 28 V, I DQ = 200 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% TBD

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev - 04-30-13 - 6 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Typical Performance Performance is based on compromised impedance point and measured at DUT reference plane. TBD

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev - 04-30-13 - 7 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Performance Over Temperature (1, 2) Performance measured in TriQuint’s 3.0 GHz to 3.5 GHz Evaluation Board at 3 dB compression. Notes: 1. Test Conditions: V DS = 28 V, I DQ = 200 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20% TBD

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev - 04-30-13 - 8 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Evaluation Board Performance (1, 2) Performance at 3 dB Compression Notes: 1. Test Conditions: V DS = 28 V, I DQ = 200 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 % Application Circuit Bias-up Procedure Set gate voltage (V G) to -5.0V Set drain voltage (V D) to 28 V Slowly increase V G until quiescent I D is 200 mA. Apply RF signal Bias-down Procedure Turn off RF signal Turn off V D and wait 1 second to allow drain capacitor dissipation Turn off V G

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev - 04-30-13 - 9 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Design Value Qty Manufacturer Part Number C1 0.3 pF 1 ATC ATC600S0R3 C2 0.2 pF 1 ATC ATC600S0R2 L1, L2 8.8 NH 2 COILCRAFT 1606-8 C3, C4, C6, C7, C8 3 pF 5 ATC ATC600S3R0 C5 0.4 pF 1 ATC ATC600S0R5 R1 97.6 Ohms 1 Venkel CR0604-16w-97R6FT R2 4.7 Ohms 1 Newark 37C0064 R3 330 Ohms 1 Newark TNPW1206330RBT9ET1-E3 R4 50 Ohms 1 ATC CRCW120651R0FKEA C9, C10 220 pF 2 AVX AVX06035C22KAT2A C11, C12 2200 pF 2 Vitramon VJ1206Y222KXA C13, C14 22000 pF 2 Vitramon VJ1206Y223KXA C15 220 uF 1 United Chemi-Con EMVY500ADA221MJA0G C16 1.0 uF 1 Allied 541-1231 L3 48 Ohm 1 Ferrite, Laird Tech. 28F0121-0SR-10

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev - 04-30-13 - 10 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Pin Layout Note: The T2G6003028-FS will be marked with the “30282” d esignator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work we ek of the assembly lot start, and the “ZZZ” is an auto-generated number. Pin Description Pin Symbol Description

1 VD / RF OUT Drain voltage / RF Output matched to 50 ohms; see E VB Layout on page 9 as an

example.

2 VG / RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an

example. 3 Flange Source connected to ground; see EVB Layout on page 9 as an example. Notes: Thermal resistance measured to bottom of package

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev - 04-30-13 - 11 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Mechanical Information All dimensions are in millimeters. Note: This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum 260 ° C reflow temperature) and tin-lead (maximum 245° C reflow temperature) soldering processes.

Datasheet: Rev - 04-30-13 © 2013 TriQuint Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class 1A Value: Passes ≥ 250 V min. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22- A114 MSL Rating Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at 2 60° C per JEDEC standard IPC/JEDEC J-STD-020. ECCN US Department of Commerce EAR99 Recommended Soldering Temperature Profile T2G6003028 30W, 28V DC – 6 GHz, GaN RF Power Transistor - 12 of 13 - Disclaimer: Subject to change without notice Product Compliance Information Sensitive Device A114 Solderability Compatible with the latest version of free solder, 260° C RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C 15 H12 Br 402) Free
• PFOS Free
• SVHC Free The part is rated Moisture Sensitivity Level 3 at 2 60° C per Recommended Soldering Temperature Profile T2G6003028 -FS

6 GHz, GaN RF Power Transistor

Disclaimer: Subject to change without notice www.triquint.com Compatible with the latest version of J-STD-020, Lead compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Halogen Free (Chlorine, Bromine) ) Free

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev - 04-30-13 - 13 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Contact Information For the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about TriQuint: Email: info-sales@triquint.com Fax: +1.972.994.8504 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the informat ion contained herein. TriQuint assumes no responsibility or liability wha tsoever for any of the information contained herein. TriQuint assumes no responsibility or liab ility whatsoever for the use of the information con tained herein. The information contained herein is provided "AS IS, WH ERE IS" and with all faults, and the entire risk as sociated with such information is entirely with the user. All information contained herein is subject to chan ge without notice. Customers should obtain and verify the latest relev ant information before placing orders for TriQuint products. The information contained herein or any use of such inf ormation does not grant, explicitly or implicitly, to any party a ny patent rights, licenses, or any other intellectual property rights, whether with regard to such inform ation itself or anything described by such information. TriQuint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life- sustaining applications, or other applications wher e a failure would reasonably be expected to cause s evere personal injury or death.